18065663. LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract (International Business Machines Corporation)

LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER

Organization Name

International Business Machines Corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NH (US)

Ruilong Xie of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18065663 titled 'LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER

The abstract describes a multi-layer integrated circuit structure with two transistors and a contact element connecting them.

• The structure includes a first transistor with a source/drain, a second transistor with a source/drain and a gate, and a contact element with horizontal features.
• The contact element connects the source/drain of the first transistor to the gate of the second transistor.

Potential Applications:

• This technology can be used in the development of advanced integrated circuits for various electronic devices.
• It can enhance the performance and efficiency of semiconductor devices in applications such as computing, communication, and consumer electronics.

Problems Solved:

• Improves the connectivity and functionality of integrated circuits.
• Enhances the overall performance and reliability of electronic devices.

Benefits:

• Increased efficiency and speed of electronic devices.
• Improved integration and miniaturization of circuit components.
• Enhanced overall performance and reliability of semiconductor devices.

Commercial Applications:

• This technology has potential commercial applications in the semiconductor industry for the development of high-performance electronic devices.
• It can be utilized in the production of advanced processors, memory chips, and other semiconductor components.

Questions about the technology: 1. How does this multi-layer integrated circuit structure improve the performance of electronic devices? 2. What are the specific advantages of using a contact element with horizontal features in connecting transistors in an integrated circuit?

Original Abstract Submitted

Embodiments of the invention provide a multi-layer integrated circuit (IC) structure that includes a first transistor, a second transistor, and a contact element. The first transistor includes a first source or drain (S/D). The second transistor includes a second S/D and a gate. The contact element includes substantially horizontal features operable to connect the first S/D of the first transistor to the gate of the second transistor.