18065195. NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL simplified abstract (International Business Machines Corporation)
Contents
NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL
Organization Name
International Business Machines Corporation
Inventor(s)
Takashi Ando of Eastchester NY (US)
Reinaldo Vega of Mahopac NY (US)
David Wolpert of Poughkeepsie NY (US)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18065195 titled 'NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL
The abstract of the patent application describes a capacitive memory cell consisting of multiple layers including an electrode, a tunneling barrier layer, a charge trapping layer, a ferroelectric layer, and another electrode.
- Simplified Explanation:
This patent application pertains to a capacitive memory cell with specific layers for storing and retrieving data.
- Key Features and Innovation:
- Electrode for electrical connection - Tunneling barrier layer for electron transport - Charge trapping layer for data storage - Ferroelectric layer for data retention - Second electrode for completing the circuit
- Potential Applications:
- Memory storage devices - Data processing systems - Electronic devices requiring non-volatile memory
- Problems Solved:
- Enhanced data retention capabilities - Improved memory cell performance - Increased efficiency in data storage and retrieval
- Benefits:
- Higher data storage capacity - Faster data access speeds - Reliable data retention over time
- Commercial Applications:
Capacitive memory cells can be utilized in various electronic devices such as smartphones, tablets, laptops, and servers to enhance data storage and processing capabilities.
- Prior Art:
Prior research in the field of memory storage technologies, ferroelectric materials, and capacitive memory cells can provide valuable insights into the development of this innovation.
- Frequently Updated Research:
Stay updated on advancements in ferroelectric materials, memory storage technologies, and semiconductor devices to understand the latest trends and innovations in the field.
Questions about capacitive memory cells: 1. How does the ferroelectric layer contribute to data retention in capacitive memory cells? 2. What are the potential challenges in scaling up capacitive memory cells for commercial applications?
Original Abstract Submitted
A capacitive memory cell includes an electrode, a tunneling barrier layer in direct contact with the electrode, a charge trapping layer in direct contact with the tunneling barrier layer, a ferroelectric layer in direct contact with the charge trapping layer, and another electrode in direct contact with the ferroelectric layer.
