18065120. SUPER VIA WITH SIDEWALL SPACER simplified abstract (International Business Machines Corporation)

SUPER VIA WITH SIDEWALL SPACER

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of NIskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Koichi Motoyama of Clifton Park NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Hosadurga Shobha of Niskayuna NY (US)

Huai Huang of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

SUPER VIA WITH SIDEWALL SPACER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18065120 titled 'SUPER VIA WITH SIDEWALL SPACER

The semiconductor device described in the abstract includes multiple metallization layers and a super via connecting them, along with an inner spacer layer on the sidewalls of the super via.

• The device features a first metallization layer.
• A second metallization layer is formed on top of the first layer.
• A third metallization layer is then added on top of the second layer.
• A super via extends from the first metallization layer to the third metallization layer.
• An inner spacer layer is formed on the sidewalls of the super via, connecting the second and first metallization layers.

Potential Applications: - Integrated circuits - Microprocessors - Memory devices

Problems Solved: - Improved connectivity between metallization layers - Enhanced performance of semiconductor devices

Benefits: - Increased efficiency in signal transmission - Reduction in signal loss - Enhanced overall device performance

Commercial Applications: Title: Enhanced Semiconductor Devices for Advanced Electronics This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also be applied in the automotive industry for advanced driver assistance systems and in the aerospace sector for communication and navigation systems.

Prior Art: Readers can explore prior patents related to semiconductor device metallization layers and vias to gain a deeper understanding of the evolution of this technology.

Frequently Updated Research: Researchers are continually exploring new materials and techniques to further improve the performance and efficiency of semiconductor devices with multiple metallization layers and super vias.

Questions about Semiconductor Devices with Multiple Metallization Layers and Super Vias: 1. How do multiple metallization layers impact the performance of semiconductor devices? 2. What are the key challenges in manufacturing semiconductor devices with super vias and inner spacer layers?

Original Abstract Submitted

A semiconductor device includes a first metallization layer; a second metallization layer formed on the first metallization layer; a third metallization layer formed on the second metallization layer; a super via extending from the first metallization layer to the third metallization layer; and an inner spacer layer formed on sidewalls of the super via from the second metallization layer to the first metallization layer.