18065117. EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)

EMBEDDED ReRAM WITH BACKSIDE CONTACT

Organization Name

International Business Machines Corporation

Inventor(s)

Min Gyu Sung of Latham NY (US)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Chanro Park of Clifton Park NY (US)

Juntao Li of Cohoes NY (US)

Soon-Cheon Seo of Glenmont NY (US)

Takashi Ando of Eastchester NY (US)

Chen Zhang of Guilderland NY (US)

Heng Wu of Santa Clara CA (US)

EMBEDDED ReRAM WITH BACKSIDE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18065117 titled 'EMBEDDED ReRAM WITH BACKSIDE CONTACT

The semiconductor structure described in the patent application includes a one-transistor one-capacitor (1T1R) device with an embedded resistive random access memory (ReRAM) that is larger than 1 gate pitch, located on either the frontside or backside of the structure. It also features a frontside contact structure connected to the source region of the transistor and a backside contact structure connected to the drain region of the transistor.

• The semiconductor structure includes a 1T1R device with embedded ReRAM.
• The ReRAM has a width larger than 1 gate pitch.
• The ReRAM can be located on the frontside or backside of the structure.
• Frontside contact structure is electrically connected to the source region of the transistor.
• Backside contact structure is electrically connected to the drain region of the transistor.

Potential Applications

This technology could be used in various electronic devices such as smartphones, tablets, and computers where non-volatile memory is required.

Problems Solved

This technology addresses the need for high-density, low-power, and high-performance memory solutions in semiconductor devices.

Benefits

The benefits of this technology include increased memory density, improved energy efficiency, and enhanced overall performance of electronic devices.

Commercial Applications

The commercial applications of this technology could revolutionize the semiconductor industry by providing more efficient and reliable memory solutions for a wide range of electronic devices.

Prior Art

Prior art related to this technology may include research papers, patents, and publications on ReRAM and semiconductor memory structures.

Frequently Updated Research

Researchers are constantly exploring new ways to enhance the performance and capabilities of ReRAM in semiconductor devices. Stay updated on the latest advancements in this field to leverage the full potential of this technology.

Questions about Semiconductor Structure with ReRAM

How does the size of the ReRAM in the semiconductor structure impact its performance?

The size of the ReRAM in the semiconductor structure can affect its speed, power consumption, and overall efficiency. Larger ReRAM cells may provide higher storage capacity but could also lead to slower read and write speeds.

What are the key challenges in integrating ReRAM into semiconductor devices?

Integrating ReRAM into semiconductor devices poses challenges related to compatibility, reliability, and scalability. Researchers are working to address these challenges to unlock the full potential of ReRAM technology.

Original Abstract Submitted

A semiconductor structure including a one-transistor one-capacitor (1T1R) device is provided that includes an embedded resistive random access memory (ReRAM) having a width larger than 1 gate pitch, that is present in a frontside or the backside of the structure, a frontside contact structure electrically connected to a source region of the transistor of the 1T1R device and a backside contact structure electrically connected to a drain region of the transistor of the 1T1R device.