18065060. BACKSIDE DIRECT CONTACT FORMATION simplified abstract (International Business Machines Corporation)

BACKSIDE DIRECT CONTACT FORMATION

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Kisik Choi of Watervliet NY (US)

Nicolas Jean Loubet of GUILDERLAND NY (US)

Theodorus E. Standaert of Clifton Park NY (US)

BACKSIDE DIRECT CONTACT FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18065060 titled 'BACKSIDE DIRECT CONTACT FORMATION

The semiconductor device described in the patent application includes source/drain (S/D) epitaxy, a gate stack next to the S/D epitaxy, a semiconductor layer with a semiconductor material surrounded by an inner spacer, an etch stop layer beneath the semiconductor layer, back trench S/D epitaxy, and a self-aligned backside contact.

• Source/drain (S/D) epitaxy
• Gate stack adjacent to the S/D epitaxy
• Semiconductor layer with inner spacer
• Etch stop layer underneath the semiconductor layer
• Back trench S/D epitaxy
• Self-aligned backside contact

Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuits

Problems Solved: - Improved performance of semiconductor devices - Enhanced electrical connectivity - Increased efficiency in electronic devices

Benefits: - Higher reliability - Better performance - Enhanced functionality

Commercial Applications: Title: "Advanced Semiconductor Device for Enhanced Performance" This technology can be used in the production of various electronic devices, such as smartphones, computers, and automotive electronics, leading to improved performance and reliability in these products.

Prior Art: Readers can explore prior patents related to semiconductor device manufacturing processes and materials to gain a better understanding of the technological advancements in this field.

Frequently Updated Research: Researchers are constantly working on improving semiconductor device designs and materials to enhance performance and efficiency in electronic devices.

Questions about Semiconductor Devices: 1. How does the inner spacer contribute to the functionality of the semiconductor device? 2. What are the advantages of using self-aligned backside contacts in semiconductor devices?

Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes source/drain (S/D) epitaxy, a gate stack adjacent to the S/D epitaxy, a semiconductor layer underlying the gate stack and including a semiconductor material surrounded by an inner spacer, an etch stop layer underlying the semiconductor layer, back trench S/D epitaxy and a self-aligned backside contact. The backside trench S/D epitaxy contacts the S/D epitaxy and is insulated from the semiconductor material by the inner spacer. The self-aligned backside contact contacts the backside trench S/D epitaxy and is insulated from the semiconductor material by the etch stop layer.