18064954. ENLARGED OVERLAP BETWEEN BACKSIDE POWER RAIL AND BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)

ENLARGED OVERLAP BETWEEN BACKSIDE POWER RAIL AND BACKSIDE CONTACT

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Tao Li of Slingerlands NY (US)

Nicholas Alexander Polomoff of Hopewell Junction NY (US)

Chih-Chao Yang of Glenmont NY (US)

ENLARGED OVERLAP BETWEEN BACKSIDE POWER RAIL AND BACKSIDE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18064954 titled 'ENLARGED OVERLAP BETWEEN BACKSIDE POWER RAIL AND BACKSIDE CONTACT

The patent application describes a structure where a backside power rail is directly below and connected to a source-drain epitaxy region of a positive field effect transistor (p-FET) via a backside contact that is vertically aligned with the epitaxy region. The backside power rail makes direct contact with both the upper horizontal surface and the vertical side surface of the backside contact.

• The backside power rail is positioned directly below and connected to the source-drain epitaxy region of a p-FET via a vertically aligned backside contact.
• The backside power rail directly contacts both the upper horizontal surface and the vertical side surface of the backside contact.

Potential Applications: - This innovation could be utilized in the semiconductor industry for enhancing the performance of positive field effect transistors. - It may find applications in power management systems where efficient power distribution is crucial.

Problems Solved: - Provides a more direct and efficient connection between the backside power rail and the source-drain epitaxy region of a p-FET. - Improves the overall performance and reliability of the transistor structure.

Benefits: - Enhanced electrical connectivity and power distribution within the transistor. - Improved efficiency and stability of the p-FET region. - Potential for increased overall performance of electronic devices utilizing this technology.

Commercial Applications: Title: Enhanced Power Distribution Structure for Positive Field Effect Transistors This technology could be valuable in the development of high-performance electronic devices such as smartphones, laptops, and other consumer electronics. It could also be beneficial in industrial applications where power management is critical.

Questions about the Technology: 1. How does the direct connection between the backside power rail and the source-drain epitaxy region improve the performance of the p-FET? 2. What are the potential challenges in implementing this technology in mass production processes?

Original Abstract Submitted

A first backside power rail directly below and connected to a first source-drain epitaxy region of a positive field effect transistor (p-FET) region via a first backside contact vertically aligned with the first source-drain epitaxy region, the first backside power rail directly contacts an upper horizontal surface of the first backside contact and the first backside power rail directly contacts a vertical side surface of the first backside contact. Forming a first backside power rail directly below and connected to a first source-drain epitaxy region of a positive field effect transistor (p-FET) region via a first backside contact vertically aligned with the first source-drain epitaxy region, where the first backside power rail directly contacts an upper horizontal surface of the first backside contact and the first backside power rail directly contacts a vertical side surface of the first backside contact.