18064261. REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract (International Business Machines Corporation)
Contents
REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES
Organization Name
International Business Machines Corporation
Inventor(s)
Matthias Georg Gottwald of Ridgefield CT (US)
Guohan Hu of Yorktown Heights NY (US)
Stephen L. Brown of Carmel NY (US)
Alexander Reznicek of Troy NY (US)
REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18064261 titled 'REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES
The semiconductor device described in the patent application includes a substrate with a crystalline bottom electrode layer, a conductive crystalline metal layer, and a conductive oxide layer with low resistance. Additionally, there is a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, consisting of a tunnel barrier layer, a free layer, and a reference layer.
- The semiconductor device features a unique structure with multiple layers designed to enhance performance and functionality.
- The inclusion of a low-resistance conductive oxide layer improves the overall efficiency of the device.
- The magnetic tunnel junction (MTJ) adds a magnetic element to the semiconductor device, potentially enabling new functionalities and applications in the field of electronics.
Potential Applications: - This technology could be applied in the development of advanced electronic devices such as sensors, memory storage, and computing systems.
Problems Solved: - The semiconductor device addresses the need for improved performance and efficiency in electronic components. - The integration of a magnetic tunnel junction offers new possibilities for magnetic-based applications in semiconductor devices.
Benefits: - Enhanced performance and efficiency in electronic devices. - Potential for new functionalities and applications in the field of electronics.
Commercial Applications: Title: Advanced Semiconductor Device with Magnetic Tunnel Junction This technology could be utilized in the production of high-performance sensors, memory storage devices, and computing systems, catering to industries such as consumer electronics, telecommunications, and data storage.
Questions about the technology: 1. How does the inclusion of a magnetic tunnel junction impact the functionality of the semiconductor device? 2. What are the potential advantages of using a conductive oxide layer with low resistance in the device design?
Original Abstract Submitted
A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. The conductive oxide layer has a low resistance. The semiconductor device also includes a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, the MTJ including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.
