18063710. MRAM DEVICE WITH HAMMERHEAD PROFILE simplified abstract (International Business Machines Corporation)

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MRAM DEVICE WITH HAMMERHEAD PROFILE

Organization Name

International Business Machines Corporation

Inventor(s)

Koichi Motoyama of Clifton Park NY (US)

Oscar Van Der Straten of Guilderland Center NY (US)

Jennifer Church of Albany NY (US)

Chih-Chao Yang of Glenmont NY (US)

MRAM DEVICE WITH HAMMERHEAD PROFILE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18063710 titled 'MRAM DEVICE WITH HAMMERHEAD PROFILE

The patent application describes a magnetic tunnel junction (MTJ) stack with a hammerhead profile, consisting of vertically aligned layers of a top electrode, a free layer, a tunneling barrier, a reference layer, and a bottom electrode. The bottom electrode and the reference layer have a smaller width compared to the top electrode, free layer, and tunneling barrier.

  • The innovation involves forming vertically aligned layers of a bottom electrode and a reference layer with a first width, and separately forming vertically aligned layers of a tunneling barrier, a free layer, and a top electrode with a second width greater than the first width.
  • This configuration allows for improved performance and efficiency in magnetic tunnel junction structures.
  • The design enhances the stability and reliability of the MTJ stack, leading to better overall device performance.
  • By optimizing the widths of the different layers, the MTJ stack can exhibit enhanced magnetic properties and reduced energy consumption.

Potential Applications: - Data storage devices - Magnetic sensors - Spintronic devices

Problems Solved: - Enhanced performance and efficiency of magnetic tunnel junction structures - Improved stability and reliability of devices - Reduced energy consumption in data storage applications

Benefits: - Higher performance levels - Increased reliability - Energy efficiency - Enhanced magnetic properties

Commercial Applications: Title: "Innovative Magnetic Tunnel Junction Stack for Advanced Data Storage Devices" This technology can be utilized in the development of next-generation data storage devices, magnetic sensors, and spintronic applications. The improved performance and efficiency offered by this innovation can lead to a competitive edge in the market.

Questions about the technology: 1. How does the hammerhead profile of the MTJ stack contribute to its performance? 2. What are the specific advantages of having different widths for the layers in the MTJ stack?


Original Abstract Submitted

A magnetic tunnel junction (MTJ) stack with a hammerhead profile, including vertically aligned layers of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode, where the bottom electrode and the reference layer each include a first width, and the top electrode, the free layer and the tunneling barrier, each include a second width greater than the first width. Forming vertically aligned layers of a bottom electrode and a reference layer on the bottom electrode, of a magnetic tunnel junction (MTJ), where the bottom electrode, the reference layer and the hard mask, each include a first width, and separately forming vertically aligned layers of a tunneling barrier, a free layer and a top electrode on the free layer, where the tunneling barrier, the free layer and the top electrode each include a second width, where the second width is greater than the first width.

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