18063540. PHOTODETECTOR WITH ROTATED ELECTRIC FIELD simplified abstract (Cisco Technology, Inc.)
Contents
- 1 PHOTODETECTOR WITH ROTATED ELECTRIC FIELD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHOTODETECTOR WITH ROTATED ELECTRIC FIELD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Photodetector Technology
- 1.13 Original Abstract Submitted
PHOTODETECTOR WITH ROTATED ELECTRIC FIELD
Organization Name
Inventor(s)
Fatemeh Rezaeifar Bayat of Mission Viejo CA (US)
Attila Mekis of Carlsbad CA (US)
Gianlorenzo Masini of Carlsbad CA (US)
PHOTODETECTOR WITH ROTATED ELECTRIC FIELD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18063540 titled 'PHOTODETECTOR WITH ROTATED ELECTRIC FIELD
Simplified Explanation
A photodetector design with a substrate, absorber, and doped regions for improved performance.
- The photodetector includes a substrate, absorber, first doped region, and second doped region.
- The absorber has two regions, with the second region being more heavily doped than the first.
- The first doped region contacts the second region of the absorber, with a portion positioned between the absorber and the substrate.
- The second doped region contacts the first region of the absorber, with a portion positioned between the absorber and the substrate.
- The second doped region extends across a majority of the width of the absorber.
Key Features and Innovation
- Photodetector design with optimized doped regions for enhanced performance.
- Improved contact between doped regions and absorber for efficient light detection.
- Enhanced sensitivity and response time due to the specific positioning of doped regions.
Potential Applications
The technology can be used in:
- Photovoltaic cells
- Optical communication systems
- Imaging devices
Problems Solved
- Enhanced light detection efficiency
- Improved signal-to-noise ratio
- Faster response time
Benefits
- Increased sensitivity
- Improved performance in low-light conditions
- Enhanced overall device efficiency
Commercial Applications
- Photovoltaic industry for improved solar cell efficiency
- Optical communication companies for faster data transmission
- Imaging device manufacturers for higher quality images
Prior Art
Readers can explore prior research on photodetector designs, doped regions, and light detection technologies to understand the evolution of this innovation.
Frequently Updated Research
Stay updated on advancements in photodetector technology, doped region optimization, and light detection efficiency for the latest developments in the field.
Questions about Photodetector Technology
What are the key advantages of using doped regions in photodetector design?
Doped regions in photodetectors help improve conductivity and sensitivity, leading to enhanced performance in light detection.
How does the positioning of doped regions impact the overall efficiency of a photodetector?
The specific positioning of doped regions in relation to the absorber plays a crucial role in optimizing light detection and response time.
Original Abstract Submitted
A photodetector includes a substrate, an absorber, a first doped region, and a second doped region. The absorber includes a first region and a second region that is more heavily doped than the first region. The first doped region is positioned on the substrate such that the first doped region contacts the second region of the absorber. A portion of the first doped region is positioned between the absorber and the substrate. The second doped region is positioned on the substrate such that the second doped region contacts the first region of the absorber rather than the second region of the absorber. A portion of the second doped region is positioned between the absorber and the substrate. The portion of the second doped region extends across a majority of a width of the absorber.
