18062116. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Semiconductor Device Structure
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Beom Jin Park of Suwon-si (KR)
Myung Gil Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18062116 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a unique structure with active patterns, nanosheets, gate electrodes, source/drain regions, active cuts, and a sacrificial layer containing silicon germanium.
- The device features two active patterns extending in different horizontal directions on the substrate.
- Nanosheets are arranged vertically on the active patterns, with a gate electrode surrounding them.
- Source/drain regions are located between the nanosheets, and an active cut separates the active patterns.
- A sacrificial layer, containing silicon germanium, is positioned between the source/drain region and the active cut.
Potential Applications
This semiconductor device could be used in advanced electronic devices such as high-performance transistors, sensors, and memory storage units.
Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the layout and materials used in their construction.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in electronic devices.
Commercial Applications
Potential commercial applications of this technology include the production of faster and more energy-efficient electronic devices for various industries such as telecommunications, computing, and consumer electronics.
Prior Art
There is no specific information provided about prior art related to this particular semiconductor device structure.
Frequently Updated Research
There is no information available on frequently updated research relevant to this technology.
Questions about Semiconductor Device Structure
Question 1
How does the unique arrangement of nanosheets and active patterns contribute to the performance of the semiconductor device?
The arrangement of nanosheets and active patterns allows for better control of the flow of electrical current within the device, leading to improved performance and efficiency.
Question 2
What advantages does the presence of a sacrificial layer containing silicon germanium offer in this semiconductor device?
The sacrificial layer containing silicon germanium helps to enhance the overall stability and reliability of the device, contributing to its long-term performance and durability.
Original Abstract Submitted
A semiconductor device including a substrate, a first and second active pattern extending in a first horizontal direction on the substrate, the second active pattern apart from the first active pattern in the first horizontal direction, first nanosheets apart from each other in a vertical direction on the first active pattern, second nanosheets apart from each other in the vertical direction on the first and second active patterns, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the first active pattern and surrounding the first nanosheets, a source/drain region between the first and second nanosheets, an active cut penetrating the second nanosheets in the vertical direction, extending to the substrate, and separating the first and second active patterns, and a sacrificial layer between the source/drain region and the active cut, in contact with the active cut, and including silicon germanium may be provided.
