18060544. BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Tao Li of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Kisik Choi of Watervliet NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18060544 titled 'BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor chip device described in the patent application includes an electronic components layer supported by a substrate. The electronic components layer consists of multiple active component structures, with a power rail positioned on the back side of this layer. A buried oxide layer is situated between the electronic components layer and the power rail, with a back side metal contact buried within the buried oxide layer. This back side metal contact serves to connect one of the active components in the electronic components layer to the power rail.

• Electronic components layer supported by a substrate
• Multiple active component structures within the electronic components layer
• Power rail positioned on the back side of the electronic components layer
• Buried oxide layer separating the electronic components layer and the power rail
• Back side metal contact buried in the buried oxide layer to bridge an active component to the power rail

Potential Applications

This technology could be applied in:

• Semiconductor manufacturing
• Electronic devices
• Power management systems

Problems Solved

This technology helps address:

• Efficient power distribution in semiconductor devices
• Enhanced connectivity between active components and power sources

Benefits

The benefits of this technology include:

• Improved performance of semiconductor chips
• Enhanced reliability of electronic components
• Better power management capabilities

Potential Commercial Applications

This technology could be commercially utilized in:

• Consumer electronics
• Automotive electronics
• Industrial automation systems

Possible Prior Art

One possible prior art for this technology could be:

• Integrated circuit structures with buried oxide layers and metal contacts

How does this technology impact the overall efficiency of semiconductor devices?

This technology improves the efficiency of semiconductor devices by providing a more reliable and efficient power distribution system, leading to better performance and power management capabilities.

What are the potential cost implications of implementing this technology in semiconductor manufacturing processes?

The cost implications of implementing this technology in semiconductor manufacturing processes could include initial investment in new equipment and materials, as well as potential savings in the long run due to improved performance and reliability of the semiconductor chips.

Original Abstract Submitted

A semiconductor chip device includes an electronic components layer supported by the substrate. The electronic components layer includes a plurality of active component structures. A power rail is positioned on a back side of the electronic components layer. A buried oxide layer is positioned between the electronic components layer and the power rail. A back side metal contact is buried in the buried oxide layer. The back side metal contact bridges one of the active components in the electronic components layer to the power rail.