18060305. LASER DICING TO CONTROL SPLASH simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Contents
- 1 LASER DICING TO CONTROL SPLASH
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LASER DICING TO CONTROL SPLASH - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
LASER DICING TO CONTROL SPLASH
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Venkataramanan Kalyanaraman of ALLEN TX (US)
LASER DICING TO CONTROL SPLASH - A simplified explanation of the abstract
This abstract first appeared for US patent application 18060305 titled 'LASER DICING TO CONTROL SPLASH
Simplified Explanation
The abstract describes a method involving the use of laser beams to create modified regions and cracks within a semiconductor substrate along a scribe street.
- Laser beams are directed at the substrate surface to form modified regions and cracks.
- The cracks created form a zigzag-shaped pattern within the substrate along the scribe street.
Potential Applications
This technology could be applied in the semiconductor industry for scribing and separating semiconductor substrates.
Problems Solved
This technology helps in the precise and efficient separation of semiconductor substrates along scribe streets.
Benefits
The method offers a controlled and accurate way to create modified regions and cracks within semiconductor substrates for scribing purposes.
Potential Commercial Applications
"Semiconductor Substrate Scribing Technology: Enhancing Precision and Efficiency"
Possible Prior Art
There may be prior art related to laser scribing techniques in the semiconductor industry, but specific examples are not provided in the abstract.
Unanswered Questions
How does this method compare to traditional scribing techniques in terms of efficiency and precision?
The abstract does not provide a direct comparison between this laser-based method and traditional scribing techniques.
Are there any limitations or challenges associated with implementing this technology on a large scale in semiconductor manufacturing?
The abstract does not address any potential limitations or challenges that may arise when scaling up this technology for commercial production.
Original Abstract Submitted
One example provides a method that includes directing a first laser beam at a surface of a semiconductor substrate along a scribe street thereof. The first laser beam is focused inside the substrate to form a first modified region, which is offset from a second modified region in a direction orthogonal to a scan direction of the first laser beam, and a first crack extending between the second modified region and the first modified region. A second laser beam is directed at the surface to form a third modified region, which is offset from the first and second modified regions, and a second crack extending from the first modified region to the surface. The first and second cracks form a zigzag-shaped crack within the substrate along the scribe street.
