18060180. IMAGE SENSOR SUBSTRATE AND IMAGE SENSOR INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

IMAGE SENSOR SUBSTRATE AND IMAGE SENSOR INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Hye Yun Park of Hwaseong-si (KR)

Yeon Sook Kim of Hwaseong-si (KR)

In Ji Lee of Hwaseong-si (KR)

Tae Young Song of Hwaseong-si (KR)

IMAGE SENSOR SUBSTRATE AND IMAGE SENSOR INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18060180 titled 'IMAGE SENSOR SUBSTRATE AND IMAGE SENSOR INCLUDING THE SAME

Simplified Explanation

The abstract of the patent application describes an image sensor substrate that consists of a semiconductor substrate layer and a semiconductor epitaxial layer. The semiconductor substrate layer has a boron (B) doping concentration ranging from 3×10cm to 1×10cm, while the semiconductor epitaxial layer has a boron (B) doping concentration ranging from 1×10cm to 6×10cm.

• The patent application describes an image sensor substrate with specific boron doping concentrations in the semiconductor layers.
• The semiconductor substrate layer has a boron doping concentration ranging from 3×10cm to 1×10cm.
• The semiconductor epitaxial layer has a boron doping concentration ranging from 1×10cm to 6×10cm.

Potential Applications:

• This technology can be used in the manufacturing of image sensors for various devices such as cameras, smartphones, and surveillance systems.
• It can be applied in the development of high-resolution imaging systems for scientific research and medical imaging.

Problems Solved:

• The specific boron doping concentrations in the semiconductor layers help optimize the performance and sensitivity of the image sensor.
• The technology addresses the need for improved image quality and resolution in image sensors.

Benefits:

• The optimized boron doping concentrations enhance the performance and sensitivity of the image sensor, resulting in improved image quality.
• The technology allows for the production of image sensors with higher resolution and better low-light performance.
• It enables the development of more advanced imaging systems for various applications.

Original Abstract Submitted

An image sensor substrate includes a semiconductor substrate layer and a semiconductor epitaxial layer on the substrate layer. The semiconductor substrate layer has a boron (B) doping concentration therein in a range from 3×10cmto 1×10cm, whereas the semiconductor epitaxial layer has a boron (B) doping concentration therein in a range from 1×10cmto 6×10cm.