LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18060056 titled 'LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION

Simplified Explanation

The present invention relates to a semiconductor device with two nanodevices comprised of multiple transistors, a power bar, and source/drain contacts.

The semiconductor device includes a first nanodevice with multiple first transistors and a second nanodevice with multiple second transistors.
The first nanodevice has a first source/drain contact, while the second nanodevice has a second source/drain contact.
The second nanodevice is positioned parallel and adjacent to the first nanodevice.
A power bar is situated between the first and second nanodevices, connected to the second source/drain contact.
The top surface of the power bar and the second source/drain contact are in the same plane and at the same height.

Potential Applications

This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, mobile devices, and Internet of Things (IoT) devices.

Problems Solved

This innovation addresses the need for more efficient and compact semiconductor devices by optimizing the layout and connectivity of nanodevices within the device structure.

Benefits

The benefits of this technology include improved performance, reduced power consumption, enhanced integration density, and potentially lower manufacturing costs for semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could include the production of next-generation processors, memory devices, sensors, and other electronic components for a wide range of industries.

Possible Prior Art

One possible prior art in this field could be the development of similar semiconductor device structures with multiple nanodevices and power bars, although the specific configuration and layout described in this patent application may offer unique advantages.

Unanswered Questions

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor device structures, leaving the reader to speculate on the potential advantages or disadvantages of this innovation.

What are the specific manufacturing processes required to implement this technology in practical semiconductor devices?

The article does not delve into the detailed manufacturing processes involved in producing semiconductor devices with the described structure, leaving a gap in understanding for readers interested in the practical implementation of this technology.

Original Abstract Submitted

According to the embodiment of the present invention, a semiconductor device includes a first nanodevice comprised of a plurality of first transistors and a second nanodevice comprised of a plurality of second transistors. The first nanodevice includes a first source/drain contact. The second nanodevice includes a second source/drain contact. The second nanodevice is located adjacent to and parallel to the first nanodevice. A power bar is located between the first nanodevice and the second nanodevice. The power bar is connected to the second source/drain contact. A top surface of the power bar and the second source/drain contact are substantially in a same plane. The top surface of the power bar and the second source/drain contact are substantially a same height.

18060056. LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

Contents

LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION

Organization Name

Inventor(s)