18059098. ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NY (US)

Ruilong Xie of Niskayuna NY (US)

Biswanath Senapati of Mechanicville NY (US)

Seiji Munetoh of Inagi (JP)

Lawrence A. Clevenger of Saratoga Springs NY (US)

ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18059098 titled 'ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE

Simplified Explanation

The abstract describes a patent application related to adjacent buried power rail for stacked field-effect transistor architecture.

• A semiconductor device comprising a first transistor stacked on a second transistor, with the first transistor offset laterally from the second transistor.
• The device includes a first buried power rail and a second buried power rail, where the first buried power rail is coupled to the first transistor and the second buried power rail is coupled to the second transistor.

Potential Applications

This technology could be applied in high-performance computing, mobile devices, and other electronic systems requiring efficient power management and compact design.

Problems Solved

This innovation addresses the challenge of providing power to stacked transistors in a compact and efficient manner, improving overall performance and reliability of semiconductor devices.

Benefits

The use of adjacent buried power rails allows for more efficient power distribution, reduced parasitic resistance, and improved overall performance of stacked field-effect transistors.

Potential Commercial Applications

The technology could be utilized in the development of advanced processors, memory devices, and other semiconductor products requiring high-density integration and improved power efficiency.

Possible Prior Art

Prior art may include similar techniques for power distribution in stacked transistors, such as through traditional power rails or other methods of power delivery in semiconductor devices.

How does this technology impact overall power consumption in semiconductor devices?

This article does not delve into the specific details of power consumption improvements achieved through the use of adjacent buried power rails. Further research or experimentation may be needed to quantify the exact impact on power efficiency.

What are the potential challenges or limitations of implementing this technology in large-scale production?

The article does not address the potential obstacles or constraints that may arise when scaling up the production of semiconductor devices using adjacent buried power rails. Additional studies or industry insights could shed light on these aspects of the technology.

Original Abstract Submitted

One or more systems, devices, and/or methods of fabrication provided herein relate to adjacent buried power rail for stacked field-effect transistor architecture. According to one embodiment, a semiconductor device can comprise a first transistor stacked on a second transistor, wherein the first transistor is offset laterally from the second transistor, and a first buried power rail and a second buried power rail, wherein the first buried power rail is coupled to the first transistor and the second buried power rail is coupled to the second transistor.