18059093. SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Min Gyu Sung of Latham NY (US)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Chanro Park of Clifton Park NY (US)
SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18059093 titled 'SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS
Simplified Explanation
The abstract of the patent application describes nanosheet transistors with support dielectric pillars that stabilize the active transistor fin.
- Nanosheet transistors with support dielectric pillars:
- The invention involves transistor devices with active transistor fins and support dielectric pillars. - The support dielectric pillar is positioned next to the active transistor fin to provide stability. - This configuration enhances the performance and reliability of the transistor device.
Potential Applications
The technology can be applied in: - Advanced electronic devices - High-performance computing systems - Nanotechnology research
Problems Solved
- Instability of active transistor fins - Performance degradation in transistor devices - Reliability issues in nanosheet transistors
Benefits
- Improved stability and performance of transistor devices - Enhanced reliability of nanosheet transistors - Potential for higher efficiency in electronic systems
Potential Commercial Applications
Optimized for: - Semiconductor industry - Electronics manufacturing companies - Research institutions
Possible Prior Art
There may be prior art related to: - Dielectric support structures in transistor devices - Nanosheet transistor configurations
Unanswered Questions
How does this technology compare to existing transistor stabilization methods?
The article does not provide a direct comparison with other methods of stabilizing transistor devices.
What are the potential challenges in implementing this technology on a large scale?
The article does not address the potential challenges in scaling up the fabrication process for widespread commercial use.
Original Abstract Submitted
One or more systems, devices, and/or methods of fabrication provided herein relate to nanosheet transistors with support dielectric pillars. According to one embodiment, a transistor device can comprise an active transistor fin and a support dielectric pillar located adjacent to the active transistor fin, wherein the support dielectric pillar stabilizes the active transistor fin.
