18058791. LAYER STRUCTURES INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURING DIELECTRIC LAYER, ELECTRONIC DEVICE INCLUDING DIELECTRIC LAYER, AND ELECTRONIC APPARATUS INCLUDING ELECTRONIC DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

LAYER STRUCTURES INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURING DIELECTRIC LAYER, ELECTRONIC DEVICE INCLUDING DIELECTRIC LAYER, AND ELECTRONIC APPARATUS INCLUDING ELECTRONIC DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Woochul Lee of Gunpo-si (KR)

Yongsung Kim of Suwon-si (KR)

Jiwoon Park of Suwon-si (KR)

Jooho Lee of Hwaseong-si (KR)

Yong-Hee Cho of Hwaseong-si (KR)

LAYER STRUCTURES INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURING DIELECTRIC LAYER, ELECTRONIC DEVICE INCLUDING DIELECTRIC LAYER, AND ELECTRONIC APPARATUS INCLUDING ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18058791 titled 'LAYER STRUCTURES INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURING DIELECTRIC LAYER, ELECTRONIC DEVICE INCLUDING DIELECTRIC LAYER, AND ELECTRONIC APPARATUS INCLUDING ELECTRONIC DEVICE

Simplified Explanation

The abstract describes a patent application for a layer structure and method of manufacturing a dielectric layer, as well as its application in electronic devices and apparatus. Here is a simplified explanation of the abstract:

  • The patent application discloses a layer structure that includes a dielectric layer, which is a material that does not conduct electricity.
  • The dielectric layer is made up of three layers: a first layer with a higher dielectric constant than silicon oxide, a second layer that enhances a specific phase of the first layer, and a third layer that increases the bandgap of the first layer.
  • The purpose of the second layer is to improve the properties of the first layer by enhancing a specific phase called rutile phase.
  • The third layer is designed to increase the bandgap of the first layer, which is the energy difference between the valence band and the conduction band. This can have various effects on the behavior of the dielectric layer in electronic devices.
  • The patent application also mentions that the dielectric layer can be used in electronic devices and electronic apparatus, suggesting potential applications in various electronic technologies.

Potential Applications:

  • Integrated circuits
  • Transistors
  • Capacitors
  • Memory devices
  • Sensors

Problems Solved:

  • Enhancing the properties of dielectric layers
  • Improving the performance of electronic devices
  • Increasing the bandgap of dielectric materials

Benefits:

  • Enhanced dielectric properties
  • Improved performance of electronic devices
  • Increased energy difference between valence and conduction bands


Original Abstract Submitted

Disclosed are a layer structure including a dielectric layer, a method of manufacturing the dielectric layer, an electronic device including the dielectric layer, and an electronic apparatus including the electronic device. The dielectric layer according to at least one embodiment includes a first layer having a dielectric constant greater than that of silicon oxide and is undoped, a second layer configured to enhance a rutile phase of the first layer, and a third layer configured to increase a bandgap of the first layer.