18058555. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Yumin Kim of Seoul (KR)

Seyun Kim of Seoul (KR)

Jinhong Kim of Seoul (KR)

Soichiro Mizusaki of Suwon-si (KR)

Youngjin Cho of Suwon-si (KR)

NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18058555 titled 'NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

Simplified Explanation

The abstract describes a nonvolatile memory device and its operating method. The device includes a memory cell array with three memory cells arranged in a vertical stack structure. The control logic applies different voltages to the memory cells to select a specific memory cell.

  • The nonvolatile memory device includes a memory cell array with three memory cells arranged vertically.
  • The control logic applies different voltages to the memory cells.
  • A first non-selection voltage is applied to the first memory cell.
  • A second non-selection voltage, different from the first, is applied to the third memory cell.
  • A selection voltage is applied to the second memory cell.
  • The second memory cell is selected as a selection memory cell.

Potential applications of this technology:

  • Nonvolatile memory devices are commonly used in various electronic devices such as smartphones, tablets, and computers.
  • This technology can improve the performance and efficiency of nonvolatile memory devices.
  • It can be applied in data storage systems, embedded systems, and other memory-intensive applications.

Problems solved by this technology:

  • Nonvolatile memory devices often face challenges in terms of speed, power consumption, and reliability.
  • This technology addresses these challenges by providing a more efficient operating method for memory cells.
  • It improves the selection process and reduces the impact on neighboring memory cells.

Benefits of this technology:

  • Improved performance: The use of different voltages for memory cells enhances the selection process, leading to faster and more reliable operations.
  • Reduced power consumption: The optimized operating method helps minimize power consumption, making the nonvolatile memory device more energy-efficient.
  • Enhanced reliability: By applying specific voltages to memory cells, the technology reduces the risk of interference and improves the overall reliability of the device.


Original Abstract Submitted

A nonvolatile memory device and an operating method thereof are provided. The nonvolatile memory device includes a memory cell array including first to third memory cells sequentially arranged in a vertical stack structure and a control logic configured to apply a first non-selection voltage to the first memory cell, apply a second non-selection voltage different from the first non-selection voltage to the third memory cell, apply a selection voltage to the second memory cell, and select the second memory cell as a selection memory cell.