18054958. SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Albert M. Young of Fishkill NY (US)
Ruilong Xie of Niskayuna NY (US)
Prabudhya Roy Chowdhury of Albany NY (US)
Jay William Strane of Warwick NY (US)
SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET - A simplified explanation of the abstract
This abstract first appeared for US patent application 18054958 titled 'SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET
Simplified Explanation
Embodiments of the invention include a stacked device with a first epitaxial region and a second epitaxial region vertically displaced from the first epitaxial region. The first epitaxial region has an asymmetric profile with a horizontal protrusion, and a contact is formed on this horizontal protrusion.
- Explanation:
- Stacked device with two epitaxial regions - First epitaxial region has asymmetric profile with horizontal protrusion - Contact formed on horizontal protrusion
- Potential Applications:
- Semiconductor devices - Integrated circuits - Power electronics
- Problems Solved:
- Improved performance of stacked devices - Enhanced contact formation - Better electrical connectivity
- Benefits:
- Increased efficiency - Higher reliability - Improved device performance
- Potential Commercial Applications:
- Electronics industry - Semiconductor manufacturing - Power management systems
- Possible Prior Art:
- Previous stacked device designs - Epitaxial region configurations
Questions:
1. How does the asymmetric profile of the first epitaxial region contribute to the performance of the stacked device? 2. What specific advantages does the formation of a contact on the horizontal protrusion provide in terms of device functionality?
- Question 1:
The asymmetric profile of the first epitaxial region may help in optimizing the electrical properties of the device, potentially improving its overall performance.
- Question 2:
Forming a contact on the horizontal protrusion may enhance the electrical connectivity within the device, leading to better signal transmission and efficiency.
Original Abstract Submitted
Embodiments of the invention include a stacked device having a first epitaxial region and a second epitaxial region vertically displaced from the first epitaxial region. The first epitaxial region comprising an asymmetric profile with a horizontal protrusion. A contact is formed on the horizontal protrusion of the first epitaxial region
