18054349. BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Alexander Reznicek of Troy NY (US)

Tsung-Sheng Kang of Ballston Lake NY (US)

Koichi Motoyama of Clifton Park NY (US)

Oscar Van Der Straten of Guilderland Center NY (US)

BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18054349 titled 'BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY

Simplified Explanation

The semiconductor device described in the abstract includes a shallow trench isolation region, an inner layer dielectric region, a transistor, and a contact via connecting the transistor to a buried power rail. The contact via is narrower at one end than at the other end.

• Shallow trench isolation region extends from one end surface to another end surface
• Inner layer dielectric region extends from a third end surface to a fourth end surface
• Fourth end surface of inner layer dielectric region is in direct contact with the first end surface
• Transistor is arranged in the inner layer dielectric region
• Contact via electrically connects the transistor to a buried power rail
• Contact via is narrower at the fourth end surface than at the first end surface

Potential Applications

The technology described in this patent application could be applied in the semiconductor industry for the development of advanced semiconductor devices with improved performance and efficiency.

Problems Solved

This technology solves the problem of efficiently connecting a transistor to a buried power rail in a semiconductor device while minimizing space and improving electrical connectivity.

Benefits

The benefits of this technology include enhanced performance, increased efficiency, and optimized space utilization in semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could include the production of high-performance electronic devices, such as smartphones, tablets, and computers.

Possible Prior Art

One possible prior art for this technology could be the use of contact vias in semiconductor devices to connect transistors to power rails. However, the specific configuration described in this patent application, with the contact via being narrower at one end, may be a novel innovation.

Unanswered Questions

How does the width variation of the contact via impact the overall performance of the semiconductor device?

The width variation of the contact via could potentially affect the electrical conductivity and efficiency of the connection between the transistor and the buried power rail. Further research and testing may be needed to determine the optimal width for the contact via.

Are there any limitations or drawbacks to the design of the inner layer dielectric region in direct contact with the shallow trench isolation region?

The direct contact between the inner layer dielectric region and the shallow trench isolation region may have implications for the overall stability and reliability of the semiconductor device. Additional studies could explore any potential limitations or drawbacks of this design.

Original Abstract Submitted

A semiconductor device includes a shallow trench isolation region extending from a first end surface to a second end surface. The semiconductor device further includes an inner layer dielectric region extending from a third end surface to a fourth end surface. The inner layer dielectric region is arranged such that the fourth end surface is in direct contact with the first end surface. The semiconductor device further includes a transistor arranged in the inner layer dielectric region and a contact via electrically connecting the transistor to a buried power rail. The contact via extends from the second end surface to the third end surface and is narrower at the fourth end surface than at the first end surface.