18054316. MICROELECTRONIC DEVICES, AND RELATED METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract (Micron Technology, Inc.)
MICROELECTRONIC DEVICES, AND RELATED METHODS OF FORMING MICROELECTRONIC DEVICES
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MICROELECTRONIC DEVICES, AND RELATED METHODS OF FORMING MICROELECTRONIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18054316 titled 'MICROELECTRONIC DEVICES, AND RELATED METHODS OF FORMING MICROELECTRONIC DEVICES
Simplified Explanation
The abstract describes a microelectronic device that consists of vertical stacks of memory cells. Each stack includes access devices, capacitors, and a conductive pillar structure. Transistor structures are placed above the memory cells, with a protective liner material in between. The abstract also mentions related methods.
- The microelectronic device has vertical stacks of memory cells.
- Each stack includes access devices, capacitors, and a conductive pillar structure.
- Transistor structures are placed above the memory cells.
- A protective liner material is used to separate the semiconductive material and the conductive pillar structure.
- The abstract also mentions related methods.
Potential Applications
- Memory devices in electronic devices such as smartphones, tablets, and computers.
- Data storage in servers and data centers.
- High-performance computing systems.
Problems Solved
- Efficient memory storage and access in microelectronic devices.
- Protection of the semiconductive material from the conductive pillar structure.
- Integration of access devices, capacitors, and transistor structures in a vertical stack.
Benefits
- Increased memory capacity and performance.
- Enhanced reliability and durability of the microelectronic device.
- Improved integration and compactness of memory cells.
Original Abstract Submitted
A microelectronic device comprises vertical stacks of memory cells, each of the vertical stacks of memory cells comprising a vertical stack of access devices, a vertical stack of capacitors horizontally neighboring the vertical stack of access devices, and a conductive pillar structure in contact with the vertical stack of access devices. The microelectronic device further comprises transistor structures vertically overlying the vertical stacks of memory cells and comprising semiconductive material, and a protective liner material horizontally intervening between the semiconductive material and the conductive pillar structure of each of the vertical stacks of memory cells. Related methods are also described.
