18054291. MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS simplified abstract (Micron Technology, Inc.)
Contents
- 1 MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Organization Name
Inventor(s)
Yuichi Yokoyama of Boise ID (US)
MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18054291 titled 'MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Simplified Explanation
The microelectronic device described in the patent application comprises a stack structure with an array region and a staircase region. The array region has vertically spaced first conductive structures, while the staircase region has second conductive structures coupled to the first ones, with portions extending in different horizontal directions. The staircase region also includes staircase structures with steps partially defined by the edges of the second conductive structures, some extending in one horizontal direction and others in a different direction.
- Array region with vertically spaced first conductive structures
- Staircase region with second conductive structures coupled to the first ones, extending in different horizontal directions
- Staircase structures with steps partially defined by the edges of the second conductive structures, extending in different horizontal directions
Potential Applications
The technology described in this patent application could be applied in:
- Memory devices
- Electronic systems
Problems Solved
This technology helps in:
- Increasing the efficiency of microelectronic devices
- Enhancing the performance of memory devices
Benefits
The benefits of this technology include:
- Improved data processing speed
- Enhanced memory storage capacity
Potential Commercial Applications
This technology could be commercially applied in:
- Semiconductor industry
- Electronics manufacturing
Possible Prior Art
One possible prior art for this technology could be the use of staircase structures in microelectronic devices to optimize space and improve performance.
Unanswered Questions
How does this technology compare to existing memory device designs in terms of efficiency and performance?
This article does not provide a direct comparison between this technology and existing memory device designs. Further research or analysis would be needed to determine the specific advantages of this innovation over current solutions.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges in scaling up this technology for commercial production. Factors such as cost, manufacturing complexity, and compatibility with existing production processes could pose challenges that need to be explored further.
Original Abstract Submitted
A microelectronic device comprises a stack structure comprising an array region comprising first conductive structures vertically spaced from one another, and a staircase region horizontally neighboring the array region and comprising second conductive structures vertically spaced from one another and coupled to the first conductive structures. The second conductive structures individually comprise portions extending in a first horizontal direction, and additional portions extending in a second horizontal direction transverse to the first horizontal direction. The staircase region comprises staircase structures having steps partially defined by edges of the second conductive structures. Some of the steps extend in the first horizontal direction and some others of the steps extend in the second horizontal direction. Related memory devices, electronic systems, and methods are also described.