18054161. BACKSIDE PROGRAMMABLE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 BACKSIDE PROGRAMMABLE MEMORY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BACKSIDE PROGRAMMABLE MEMORY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
BACKSIDE PROGRAMMABLE MEMORY
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Albert M. Chu of Nashua NH (US)
Junli Wang of Slingerlands NY (US)
Albert M. Young of Fishkill NY (US)
Brent A. Anderson of Jericho VT (US)
Ruilong Xie of Niskayuna NY (US)
Carl Radens of LaGrangeville NY (US)
BACKSIDE PROGRAMMABLE MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18054161 titled 'BACKSIDE PROGRAMMABLE MEMORY
Simplified Explanation
Embodiments of the present invention involve processing methods and resulting structures with backside programmable memory cells. In one example, a front end of line structure is formed with programmable cells, each including a backside via in direct contact with a device region. The backside vias are divided into placeholder and programmed backside vias. A back end of line structure (word line) is formed on one surface, while a backside structure with backside metallization layer (bit line) is formed on the opposite surface.
- Front end of line structure with programmable cells
- Backside vias in direct contact with device region
- Placeholder and programmed backside vias
- Back end of line structure (word line)
- Backside structure with backside metallization layer (bit line)
Potential Applications
This technology could be applied in:
- Memory devices
- Integrated circuits
- Semiconductor manufacturing
Problems Solved
This innovation addresses issues related to:
- Memory cell programming
- Backside contact in semiconductor devices
Benefits
The benefits of this technology include:
- Increased memory cell programmability
- Enhanced device performance
- Improved manufacturing processes
Potential Commercial Applications
This technology has potential in:
- Consumer electronics
- Automotive electronics
- Industrial automation
Possible Prior Art
One possible prior art is the use of front-end and back-end structures in semiconductor devices for memory applications.
Unanswered Questions
How does this technology impact overall device reliability?
The article does not provide information on the reliability of devices using this technology. Further research and testing may be needed to determine the impact on device reliability.
What are the potential challenges in scaling this technology for mass production?
The article does not address the scalability of this technology for mass production. It is important to consider the challenges that may arise when implementing this technology on a larger scale.
Original Abstract Submitted
Embodiments of the present invention are directed to processing methods and resulting structures having backside programmable memory cells. In a non-limiting embodiment, a front end of line structure having a plurality of programmable cells is formed such that each programmable cell includes a backside via in direct contact with a device region of the respective cell. A first portion of the backside vias defines one or more placeholder backside vias and a second portion defines one or more programmed backside vias. A back end of line structure (word line) is formed on a first surface of the front end of line structure. A backside structure is formed on a second surface of the front end of line structure opposite the first surface. The backside structure includes a backside metallization layer (bit line) in direct contact with the one or more programmed backside vias.