18053484. Semiconductor Devices And Data Storage Systems Including The Same simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
Semiconductor Devices And Data Storage Systems Including The Same
Organization Name
Inventor(s)
Sanghoon Kim of Hwaseong-si (KR)
Semiconductor Devices And Data Storage Systems Including The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18053484 titled 'Semiconductor Devices And Data Storage Systems Including The Same
Simplified Explanation
The patent application describes a semiconductor device with a specific structure and configuration of layers and electrodes. Here are the key points:
- The device includes a lower structure and a pattern structure with three layers stacked on top of each other.
- Gate electrodes are placed on the pattern structure, spaced apart in a direction perpendicular to the surface of the pattern structure.
- A channel structure, consisting of a channel layer and a metal-semiconductor compound layer, passes through the gate electrodes.
- The metal-semiconductor compound layer makes contact with both the channel layer and the second pattern layer.
- The channel structure extends into the first pattern layer and passes through the second and third pattern layers.
- The second pattern layer has a first metal layer that contacts the metal-semiconductor compound layer.
- A portion of the metal-semiconductor compound layer overlaps with the lower gate electrode in a direction perpendicular to the spacing of the gate electrodes.
Potential applications of this technology:
- Semiconductor devices used in various electronic devices such as computers, smartphones, and tablets.
- Power electronics applications, including power converters, inverters, and motor drives.
- Integrated circuits for communication systems, including wireless communication devices and network equipment.
Problems solved by this technology:
- Improved performance and efficiency of semiconductor devices.
- Enhanced control and functionality of gate electrodes and channel structures.
- Reduction of power losses and improved power handling capabilities.
Benefits of this technology:
- Higher performance and efficiency in electronic devices.
- Improved reliability and durability of semiconductor devices.
- Enhanced functionality and control in power electronics applications.
- Potential for smaller and more compact device designs.
Original Abstract Submitted
A semiconductor device includes a lower structure; a pattern structure including first to third pattern layers sequentially stacked on the lower structure; gate electrodes stacked on the pattern structure and spaced apart from each other in a first direction that is perpendicular to an upper surface of the pattern structure, and a channel structure passing through the gate electrodes. The channel structure includes a channel layer and a metal-semiconductor compound layer. The metal-semiconductor compound layer contacts the channel layer and the second pattern layer. The channel structure passes through the second and third pattern layers and extends into the first pattern layer. The second pattern layer has a first metal layer contacting the metal-semiconductor compound layer. At least a portion of the metal-semiconductor compound layer overlaps the lower gate electrode in a second direction perpendicular to the first direction.
