18050600. MAGNETIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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MAGNETIC MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Stuart Papworth Parkin of Halle (DE)

See-Hun Yang of Halle (DE)

Jiho Yoon of Halle (DE)

Ung Hwan Pi of Hwaseong-si (KR)

MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18050600 titled 'MAGNETIC MEMORY DEVICE

Simplified Explanation

The abstract describes a magnetic memory device that includes a magnetic track with multiple layers and a non-magnetic pattern. The layers are antiferromagnetically coupled and the non-magnetic pattern has inclined junction surfaces.

  • The magnetic memory device includes a magnetic track with multiple layers.
  • The layers consist of a lower magnetic layer, an upper magnetic layer, and a spacer layer.
  • The lower and upper magnetic layers are antiferromagnetically coupled by the spacer layer.
  • A non-magnetic pattern is present on the lower magnetic layer and at the side of the upper magnetic layer.
  • The non-magnetic pattern has two surfaces opposite to each other in a perpendicular direction.
  • The junction surface between the non-magnetic pattern and the upper magnetic layer is inclined with respect to a reference surface.

Potential Applications

  • Magnetic storage devices
  • Computer memory systems
  • Data storage in electronic devices

Problems Solved

  • Improved magnetic memory device design
  • Enhanced data storage capabilities
  • Increased efficiency and reliability of memory systems

Benefits

  • Antiferromagnetic coupling between layers improves stability and performance
  • Inclined junction surface allows for better control of magnetic properties
  • Non-magnetic pattern provides additional functionality and versatility


Original Abstract Submitted

A magnetic memory device includes a magnetic track extending in a first direction. The magnetic track includes a lower magnetic layer, an upper magnetic layer on the lower magnetic layer, a non-magnetic pattern on the lower magnetic layer and at a side of the upper magnetic layer, and a spacer layer between the lower magnetic layer and the upper magnetic layer and extending between the lower magnetic layer and the non-magnetic pattern. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer. The non-magnetic pattern has a first surface and a second surface which are opposite to each other in a second direction perpendicular to the first direction. A junction surface between the non-magnetic pattern and the upper magnetic layer is inclined with respect to a reference surface perpendicular to the first surface and the second surface.