18049328. DICING METHOD simplified abstract (CANON KABUSHIKI KAISHA)

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DICING METHOD

Organization Name

CANON KABUSHIKI KAISHA

Inventor(s)

Tetsuro Yasukawa of Chiba (JP)

Takeshi Shibata of Kanagawa (JP)

DICING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18049328 titled 'DICING METHOD

Simplified Explanation

The abstract describes a method for dicing wafers using a laser and varying focal lengths. Here are the bullet points to explain the patent/innovation:

  • The method involves bonding two wafers together, one with a lower resistivity and the other with a higher resistivity.
  • A laser is used to irradiate the bonded wafer while adjusting the focal length in the thickness direction.
  • This process creates multiple modified regions along a dicing line on the wafer.
  • The bonded wafer is then diced by performing an expansion process on the modified regions.
  • The expansion process allows for clean and precise dicing of the wafer along the dicing line.

Potential applications of this technology:

  • Semiconductor manufacturing: This method can be used in the production of semiconductor devices, where wafers need to be diced into individual chips.
  • Electronics manufacturing: The method can also be applied in the manufacturing of various electronic components that require precise dicing of wafers.

Problems solved by this technology:

  • Improved dicing precision: By using a laser and varying focal lengths, this method allows for more precise dicing of wafers, reducing the risk of damage to the individual chips.
  • Enhanced yield: The expansion process used in this method helps to minimize the occurrence of defects during the dicing process, leading to higher yield rates.

Benefits of this technology:

  • Cost-effective: The use of a laser and the expansion process can potentially reduce the need for additional equipment and materials, making the dicing process more cost-effective.
  • Time-saving: The method offers a faster and more efficient way of dicing wafers compared to traditional methods, leading to increased productivity in manufacturing processes.


Original Abstract Submitted

A dicing method including the steps of: bonding a first wafer having a first wafer resistivity and a second wafer having a second wafer resistivity higher than the wafer first resistivity, thereby forming a bonded wafer; irradiating the bonded wafer with a laser while varying focal lengths in a thickness direction of the bonded wafer, thereby forming a plurality of modified regions along a dicing line; and dicing the bonded wafer along the dicing line by performing an expansion process on the bonded wafer formed with the modified regions.

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