17994487. SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Indira Seshadri of Niskayuna NY (US)
Jay William Strane of Warwick NY (US)
Shogo Mochizuki of Mechanicville NY (US)
SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17994487 titled 'SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
Simplified Explanation
The semiconductor structure described in the patent application includes semiconductor layers of two nanosheet stacks, with the second nanosheet stack having a stepped formation with respect to the first nanosheet stack. Additionally, there are first and second epitaxial growths formed adjacent to the semiconductor layers of the respective nanosheet stacks, with the second epitaxial growth having a greater volume than the first epitaxial growth.
- Semiconductor structure with two nanosheet stacks
- Second nanosheet stack has a stepped formation
- First and second epitaxial growths adjacent to respective nanosheet stacks
- Second epitaxial growth has a greater volume than the first epitaxial growth
Potential Applications
The technology described in the patent application could potentially be used in:
- Advanced semiconductor devices
- High-performance electronic components
- Next-generation computing systems
Problems Solved
This technology addresses the following issues:
- Enhancing semiconductor performance
- Improving device efficiency
- Increasing processing speed
Benefits
The benefits of this technology include:
- Higher performance capabilities
- Improved energy efficiency
- Enhanced overall device functionality
Potential Commercial Applications
The semiconductor structure innovation could have commercial applications in:
- Semiconductor manufacturing industry
- Electronics and consumer technology sector
- Research and development for advanced devices
Possible Prior Art
One possible prior art related to this technology is the development of nanosheet structures in semiconductor devices to improve performance and efficiency.
Unanswered Questions
How does the stepped formation of the second nanosheet stack impact overall device performance?
The stepped formation of the second nanosheet stack may introduce new interfaces and material properties that could affect device characteristics such as carrier mobility and leakage current.
What are the specific manufacturing processes involved in creating the semiconductor structure described in the patent application?
The patent application does not provide detailed information on the specific techniques and methods used to fabricate the semiconductor structure with the two nanosheet stacks and epitaxial growths.
Original Abstract Submitted
A semiconductor structure is presented including semiconductor layers of a first nanosheet stack, semiconductor layers of a second nanosheet stack formed over and having a stepped nanosheet formation with respect to the semiconductor layers of the first nanosheet stack, a first epitaxial growth formed adjacent the semiconductor layers of the first nanosheet stack, and a second epitaxial growth formed adjacent the semiconductor layers of the second nanosheet stack such that the second epitaxial growth has a stepped formation with respect to the first epitaxial growth. The second epitaxial growth has a volume greater than a volume of the first epitaxial growth.
