17994397. WORD LINE PUMP DEVICE OF DYNAMIC RANDOM ACCESS MEMORY CHIP AND CLAMP CIRCUIT THEREOF simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
- 1 WORD LINE PUMP DEVICE OF DYNAMIC RANDOM ACCESS MEMORY CHIP AND CLAMP CIRCUIT THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WORD LINE PUMP DEVICE OF DYNAMIC RANDOM ACCESS MEMORY CHIP AND CLAMP CIRCUIT THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
WORD LINE PUMP DEVICE OF DYNAMIC RANDOM ACCESS MEMORY CHIP AND CLAMP CIRCUIT THEREOF
Organization Name
Inventor(s)
Ting-Shuo Hsu of New Taipei City (TW)
WORD LINE PUMP DEVICE OF DYNAMIC RANDOM ACCESS MEMORY CHIP AND CLAMP CIRCUIT THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17994397 titled 'WORD LINE PUMP DEVICE OF DYNAMIC RANDOM ACCESS MEMORY CHIP AND CLAMP CIRCUIT THEREOF
Simplified Explanation
The abstract describes a patent application for a word line pump device and a clamp circuit for a DRAM chip. The clamp circuit ensures that the word line voltage is clamped to a specific level when the power supply voltage is not received by the word line pump device.
- The DRAM chip receives two different voltages from an external source, with one voltage being lower than the other.
- The clamp circuit is responsible for maintaining the word line voltage at the higher level when the word line pump device is not powered.
Potential Applications
This technology could be applied in the manufacturing of DRAM chips and other memory devices to ensure stable operation and prevent data loss due to voltage fluctuations.
Problems Solved
1. Voltage instability in DRAM chips. 2. Data loss due to voltage fluctuations.
Benefits
1. Improved reliability of DRAM chips. 2. Enhanced data integrity. 3. Prevention of data loss.
Potential Commercial Applications
Optimizing Memory Performance: Improving the stability and reliability of DRAM chips can lead to better performance in various electronic devices, such as computers, smartphones, and servers.
Possible Prior Art
There may be existing patents or technologies related to voltage regulation in memory devices, but specific prior art related to this exact combination of a word line pump device and clamp circuit may need further research.
Unanswered Questions
How does this technology impact the overall efficiency of DRAM chips?
This article does not provide information on how the word line pump device and clamp circuit affect the efficiency of DRAM chips.
Are there any potential drawbacks or limitations to implementing this technology?
The article does not address any potential drawbacks or limitations that may arise from using the word line pump device and clamp circuit in DRAM chips.
Original Abstract Submitted
A word line pump device of a dynamic random access memory (DRAM) chip and a clamp circuit thereof are provided. The DRAM chip receives a first voltage and a second voltage from outside, and the first voltage is smaller than the second voltage. The clamp circuit clamps a word line voltage to the second voltage in response to the word line pump device not receiving a power supply voltage.
