17989633. SEMICONDUCTOR PACKAGE STRUCTURE simplified abstract (UNITED MICROELECTRONICS CORP.)
Contents
SEMICONDUCTOR PACKAGE STRUCTURE
Organization Name
Inventor(s)
Purakh Raj Verma of Singapore (SG)
Ching-Yang Wen of Singapore (SG)
XINGXING Chen of Singapore (SG)
SEMICONDUCTOR PACKAGE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17989633 titled 'SEMICONDUCTOR PACKAGE STRUCTURE
The semiconductor device described in the abstract consists of two wafers bonded together, with one wafer containing a deep trench capacitor and the other wafer containing an active device and metal interconnections.
- The first wafer has a deep trench capacitor in the substrate, with inter-layer dielectric and inter-metal dielectric layers, and a metal interconnection.
- The second wafer includes a first active device on a silicon-on-insulator substrate and a metal interconnection connected to the active device and the deep trench capacitor.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be applied in the development of high-performance integrated circuits and memory devices.
Problems Solved: - Provides a compact and efficient way to integrate deep trench capacitors with active devices in semiconductor devices. - Enhances the performance and functionality of semiconductor devices by optimizing the layout and interconnections.
Benefits: - Improved efficiency and performance of semiconductor devices. - Enhanced integration capabilities for complex electronic systems.
Commercial Applications: - This technology can be utilized in the production of smartphones, tablets, computers, and other consumer electronics. - It can also be beneficial for automotive electronics, industrial automation, and telecommunications equipment.
Questions about the technology: 1. How does the integration of deep trench capacitors with active devices improve the performance of semiconductor devices? 2. What are the potential challenges in scaling up this technology for mass production?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor manufacturing techniques and materials to enhance the performance of devices utilizing this technology.
Original Abstract Submitted
A semiconductor device includes a first wafer having a deep trench capacitor and a second wafer bonded to the first wafer, in which the second wafer includes a first active device on a first silicon-on-insulator (SOI) substrate and a first metal interconnection connected to the first active device and the deep trench capacitor. The first wafer further includes the deep trench capacitor disposed in a substrate, a first inter-layer dielectric (ILD) layer on the deep trench capacitor, a first inter-metal dielectric (IMD) layer on the first ILD layer, and a second metal interconnection in the first ILD layer and the first IMD layer.
