17985138. MANDREL-PULL-FIRST INTERCONNECT PATTERNING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 MANDREL-PULL-FIRST INTERCONNECT PATTERNING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MANDREL-PULL-FIRST INTERCONNECT PATTERNING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does the semiconductor structure with spin-on glass filling compare to other semiconductor structures in terms of performance and reliability?
- 1.9.3 What specific manufacturing processes are involved in creating the semiconductor structure with spin-on glass filling?
- 1.10 Original Abstract Submitted
MANDREL-PULL-FIRST INTERCONNECT PATTERNING
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Xiaoming Yang of Clifton Park NY (US)
Yann Mignot of Slingerlands NY (US)
SOMNATH Ghosh of CLIFTON PARK NY (US)
Daniel Charles Edelstein of White Plains NY (US)
MANDREL-PULL-FIRST INTERCONNECT PATTERNING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17985138 titled 'MANDREL-PULL-FIRST INTERCONNECT PATTERNING
Simplified Explanation
The semiconductor structure described in the abstract includes a substrate with a spacer protruding from it, surrounding a cavity, and filled with spin-on glass.
- The semiconductor structure consists of a substrate, which is the base material.
- A spacer protrudes from the substrate, surrounding a cavity within the structure.
- The cavity is filled with spin-on glass, a material used in semiconductor manufacturing.
Potential Applications
This technology could be applied in the manufacturing of semiconductor devices, such as integrated circuits and microchips.
Problems Solved
This innovation helps in creating a more efficient and reliable semiconductor structure by providing a spacer and filling the cavity with spin-on glass, which can improve the overall performance of the device.
Benefits
The use of spin-on glass in filling the cavity can enhance the insulation and protection of the semiconductor structure, leading to better functionality and longevity of the device.
Potential Commercial Applications
The technology could be utilized in the production of various electronic devices, including smartphones, computers, and other consumer electronics.
Possible Prior Art
Prior art may include similar semiconductor structures with cavities filled with different materials, or structures without spacers surrounding the cavity.
Unanswered Questions
How does the semiconductor structure with spin-on glass filling compare to other semiconductor structures in terms of performance and reliability?
The article does not provide a direct comparison between this semiconductor structure and others in terms of performance and reliability.
What specific manufacturing processes are involved in creating the semiconductor structure with spin-on glass filling?
The article does not detail the specific manufacturing processes involved in creating this semiconductor structure with spin-on glass filling.
Original Abstract Submitted
A semiconductor structure includes a substrate; a spacer protruding from the substrate and surrounding a cavity; and spin-on glass filling a portion of the cavity.
