17977250. SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Contents
- 1 SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS)
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to other isolation methods in terms of performance and efficiency?
- 1.11 What are the potential challenges in scaling up this technology for mass production?
- 1.12 Original Abstract Submitted
SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS)
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Scott Kelly Montgomery of Rowlett TX (US)
Jeffery Nilles of Los Altos CA (US)
SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) - A simplified explanation of the abstract
This abstract first appeared for US patent application 17977250 titled 'SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS)
Simplified Explanation
The present disclosure pertains to shallow trench isolation (STI) processing with local oxidation of silicon (LOCOS) and an integrated circuit formed thereby. An example integrated circuit includes a semiconductor layer, a LOCOS layer, an STI structure, and a passive circuit component. The semiconductor layer is over a substrate, the LOCOS layer is over the semiconductor layer, the STI structure extends into the semiconductor layer, and the passive circuit component is over and touches the LOCOS layer.
- Semiconductor layer over a substrate
- LOCOS layer over the semiconductor layer
- STI structure extending into the semiconductor layer
- Passive circuit component over and touching the LOCOS layer
Potential Applications
This technology can be applied in the manufacturing of integrated circuits, particularly in the development of advanced semiconductor devices.
Problems Solved
This innovation helps in improving the isolation between components in an integrated circuit, reducing interference and enhancing overall performance.
Benefits
- Enhanced isolation between components - Improved performance of integrated circuits - Potential for more compact and efficient circuit designs
Potential Commercial Applications
The technology can be utilized in the production of various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
Possible Prior Art
Prior art may include similar techniques used in semiconductor processing for isolation and integration of circuit components.
Unanswered Questions
How does this technology compare to other isolation methods in terms of performance and efficiency?
The article does not provide a direct comparison with other isolation methods, leaving room for further analysis on the advantages and disadvantages of this approach.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the scalability of this technology for large-scale manufacturing, which could pose challenges in terms of cost and feasibility.
Original Abstract Submitted
The present disclosure generally relates to shallow trench isolation (STI) processing with local oxidation of silicon (LOCOS), and an integrated circuit formed thereby. In an example, an integrated circuit includes a semiconductor layer, a LOCOS layer, an STI structure, and a passive circuit component. The semiconductor layer is over a substrate. The LOCOS layer is over the semiconductor layer. The STI structure extends into the semiconductor layer. The passive circuit component is over and touches the LOCOS layer.
