17970764. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Hyo Seok Choi of Hwaseong-si (KR)
Kyoung Sun Kim of Suwon-si (KR)
Seong Joon Ahn of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17970764 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a semiconductor memory device that includes a cell substrate with a cell array region and an extended region. The device also has gate electrodes made of molybdenum stacked on the cell substrate, and channel structures in the cell array region that penetrate the gate electrodes. At least one of the gate electrodes contains voids in the region between the channel structures.
- The semiconductor memory device includes a cell substrate with a cell array region and an extended region.
- The device has gate electrodes made of molybdenum stacked on the cell substrate.
- Channel structures are present in the cell array region and penetrate the gate electrodes.
- At least one of the gate electrodes contains voids in the region between the channel structures.
Potential Applications
- This semiconductor memory device can be used in various electronic devices such as computers, smartphones, and tablets.
- It can be utilized in data storage applications, allowing for faster and more efficient memory operations.
Problems Solved
- The presence of voids in the gate electrodes helps to improve the performance and reliability of the semiconductor memory device.
- The voids in the gate electrodes may reduce the occurrence of leakage currents and improve the overall functionality of the device.
Benefits
- The inclusion of voids in the gate electrodes enhances the performance and reliability of the semiconductor memory device.
- The improved functionality of the device leads to faster and more efficient memory operations.
- The reduction in leakage currents can result in lower power consumption and increased battery life in electronic devices.
Original Abstract Submitted
A semiconductor memory device includes a cell substrate including a cell array region and an extended region, gate electrodes stacked on the cell substrate, the gate electrodes including molybdenum, and channel structures in the cell array region, the channel structures penetrating the gate electrodes, wherein at least one of the gate electrodes includes at least one void in a region between the channel structures.
