17965957. MEMORY SYSTEM REFRESH MANAGEMENT simplified abstract (Micron Technology, Inc.)
Contents
MEMORY SYSTEM REFRESH MANAGEMENT
Organization Name
Inventor(s)
Kang-Yong Kim of Boise ID (US)
MEMORY SYSTEM REFRESH MANAGEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17965957 titled 'MEMORY SYSTEM REFRESH MANAGEMENT
Simplified Explanation
The abstract describes a patent application related to memory system refresh management. It explains that a refresh operation can be performed on a set of memory cells in a memory device. The operation involves receiving a mode register write command and writing mode register data associated with the command. The refresh operation is then performed on the set of memory cells at the address location indicated by the written mode register data.
- A refresh operation is performed on a set of memory cells in a memory device.
- The memory device has multiple sets of memory cells corresponding to different portions of the memory array.
- The refresh operation involves receiving a mode register write command.
- Mode register data associated with the command is written.
- The refresh operation is performed on the set of memory cells at the address location indicated by the written mode register data.
Potential Applications
- Memory system management in various electronic devices.
- Improving the performance and reliability of memory systems in computers, smartphones, and other devices.
Problems Solved
- Ensuring the proper functioning and longevity of memory cells in a memory device.
- Managing the refresh operation efficiently to avoid data loss or corruption.
Benefits
- Enhanced performance and reliability of memory systems.
- Improved data integrity and longevity of memory cells.
- Efficient management of refresh operations in memory devices.
Original Abstract Submitted
Systems, apparatuses, and methods related to memory system refresh management are described herein. In an example, a refresh operation can be performed on a set of memory cells in a memory device. The memory device comprising a plurality of sets of memory cells corresponding to respective portions of an array of memory cells of the memory device. The refresh operation can include receiving a mode register write command. The refresh operation can include writing mode register data associated with the mode register write command. The refresh operation can be performed on the set of memory cells at an address location indicated by the written mode register data.
