17964957. SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING BUFFER STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING BUFFER STRUCTURE
Organization Name
Inventor(s)
Namsung Kim of Hwaseong-si (KR)
Daemyung Chun of Hwaseong-si (KR)
SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING BUFFER STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17964957 titled 'SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING BUFFER STRUCTURE
Simplified Explanation
The patent application describes a semiconductor light-emitting device that includes a buffer structure, semiconductor layers, and a dislocation-removing structure. The dislocation-removing structure helps to improve the quality of the device by reducing dislocations and improving surface roughness.
- The semiconductor light-emitting device includes a buffer structure, semiconductor layers, and a dislocation-removing structure.
- The buffer structure consists of a nucleation layer, a first dislocation-removing structure, and a buffer layer.
- The first dislocation-removing structure includes a first material layer and a second material layer with different lattice constants.
- The top surface of the first material layer has a higher roughness than the nucleation layer and the second material layer.
Potential applications of this technology:
- LED lighting: The semiconductor light-emitting device can be used in LED lighting applications to provide efficient and high-quality lighting.
- Display technology: The device can be used in display panels for televisions, smartphones, and other electronic devices to enhance the visual quality.
- Optical communication: The semiconductor light-emitting device can be utilized in optical communication systems for transmitting data over long distances.
Problems solved by this technology:
- Dislocations: The dislocation-removing structure helps to reduce dislocations in the semiconductor layers, improving the overall quality and performance of the device.
- Surface roughness: By controlling the roughness of the different layers, the device achieves a smoother surface, which can enhance the efficiency and reliability of the device.
Benefits of this technology:
- Improved device quality: The dislocation-removing structure helps to improve the quality of the semiconductor light-emitting device, leading to better performance and reliability.
- Enhanced surface roughness control: The ability to control the roughness of different layers allows for improved surface quality, which can result in better optical properties and device efficiency.
- Versatile applications: The technology can be applied in various fields such as LED lighting, display technology, and optical communication, providing a wide range of potential uses.
Original Abstract Submitted
A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.
