17964365. CAPACITOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

CAPACITOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Taehwan Moon of Suwon-si (KR)

Jinseong Heo of Seoul (KR)

Seunggeol Nam of Suwon-si (KR)

Dukhyun Choe of Suwon-si (KR)

CAPACITOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17964365 titled 'CAPACITOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

Simplified Explanation

The abstract describes a patent application for a capacitor device and a semiconductor device that includes the capacitor device. The capacitor device consists of two electrodes separated by a dielectric layer. The dielectric layer is made up of a mixture of ferroelectrics and antiferroelectrics.

• The capacitor device includes two electrodes and a dielectric layer.
• The dielectric layer is made of a mixture of ferroelectrics and antiferroelectrics.
• The capacitor device is part of a semiconductor device.

Potential applications of this technology:

• Capacitors are widely used in electronic devices, so this innovation could be applied to various electronic devices.
• The mixture of ferroelectrics and antiferroelectrics in the dielectric layer could enhance the performance of the capacitor device.

Problems solved by this technology:

• The mixture of ferroelectrics and antiferroelectrics in the dielectric layer may provide improved electrical properties compared to traditional dielectric materials.
• The capacitor device may have enhanced capacitance and stability due to the combination of ferroelectrics and antiferroelectrics.

Benefits of this technology:

• The capacitor device with the mixed dielectric layer may have improved performance and reliability.
• The semiconductor device incorporating this capacitor device may have enhanced functionality and efficiency.

Original Abstract Submitted

A capacitor device and a semiconductor device including the capacitor device are provided. The capacitor device includes first and second electrodes spaced apart from each other, and a dielectric layer provided between the first electrode and the second electrode. The dielectric layer includes a dielectric material in which ferroelectrics and antiferroelectrics are mixed with each other.