17962496. CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer simplified abstract (International Business Machines Corporation)

CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer

Organization Name

International Business Machines Corporation

Inventor(s)

Alexander Reznicek of Troy NY (US)

Young-Suk Choi of Niskayuna NY (US)

Matthias Georg Gottwald of Ridgefield CT (US)

Daniel P. Morris of Purchase NY (US)

CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer - A simplified explanation of the abstract

This abstract first appeared for US patent application 17962496 titled 'CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer

Simplified Explanation

The patent application describes a method for encapsulating magnetic tunneling junction (MTJ) pillars with a boron-containing encapsulation layer to control the diffusion of boron out of the magnetic free layers.

• MTJ pillars are placed on a substrate with magnetic reference layers and magnetic free layers containing boron.
• A boron-containing encapsulation layer is applied to the MTJ pillars, with a higher atomic percentage of boron than the magnetic free layers.
• The boron-containing encapsulation layer limits the diffusion of boron out of the magnetic free layers, maintaining the stability and performance of the MTJ devices.

Potential Applications

The technology can be applied in:

• Magnetic random-access memory (MRAM)
• Magnetic sensors
• Spintronic devices

Problems Solved

The technology addresses the issue of boron diffusion in MTJ devices, ensuring long-term stability and performance.

Benefits

• Improved reliability and longevity of MTJ devices
• Enhanced control over magnetic properties
• Increased efficiency in data storage and processing

Potential Commercial Applications

"Enhancing MTJ Device Stability with Boron-Containing Encapsulation Layer" can be used in:

• Semiconductor industry
• Data storage companies
• Electronics manufacturers

Possible Prior Art

There may be prior art related to encapsulation techniques in magnetic devices, but specific examples of boron-containing encapsulation layers for MTJ pillars may be limited.

Unanswered Questions

How does the thickness of the boron-containing encapsulation layer impact the diffusion of boron in MTJ devices?

The patent application mentions a range of 1-3 nanometers for the thickness of the encapsulation layer, but the specific effects of different thicknesses are not detailed.

Are there any potential drawbacks or limitations to using a boron-containing encapsulation layer in MTJ devices?

While the benefits of the technology are highlighted, it would be important to explore any negative impacts or challenges that may arise from its implementation.

Original Abstract Submitted

One or more magnetic tunneling junction (MTJ) pillars are disposed on a substrate. The pillars have one or more magnetic reference layers and one or more magnetic free layers. The magnetic free layers have one or more external surfaces and are made of a magnetic free layer material containing atomic percentage amount of boron. A boron-containing encapsulation layer encapsulates the MTJ pillar(s) and is in direct contact with the magnetic free layer external surfaces. The boron-containing encapsulation layer contains an atomic percentage amount of boron greater than the magnetic free layer atomic percentage amount of boron. Embodiments of the boron-containing encapsulation layer contain at least 95 percent pure boron and are between 1 and 3 nanometers thick. Accordingly, the boron-containing encapsulation layer controls and limits the amount of boron diffusing out of the magnetic free layer across a boron diffusion interface formed between the magnetic free layer external surfaces and the boron-containing encapsulation layer. Alternative embodiments of boron-containing encapsulation layers and methods of making MTJ devices are disclosed.