17961335. System and Method for Plasma Process Uniformity Control simplified abstract (Tokyo Electron Limited)
Contents
- 1 System and Method for Plasma Process Uniformity Control
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 System and Method for Plasma Process Uniformity Control - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
System and Method for Plasma Process Uniformity Control
Organization Name
Inventor(s)
Sergey Voronin of Albany NY (US)
System and Method for Plasma Process Uniformity Control - A simplified explanation of the abstract
This abstract first appeared for US patent application 17961335 titled 'System and Method for Plasma Process Uniformity Control
Simplified Explanation
In a method of plasma processing, direct current voltage is delivered to a substrate holder with an upper side that supports a substrate in a plasma processing chamber. The upper side is divided into multiple zones by isolated conductors, and the voltage is pulsed to different conductors with different parameters.
- The method involves delivering direct current voltage to a substrate holder with an upper side divided into zones by isolated conductors.
- The direct current voltage is pulsed as first and second direct current pulses to different conductors with different parameters.
- The pulsing of the voltage to the second conductor occurs simultaneously with pulsing to the first conductor.
Potential Applications
This technology could be applied in semiconductor manufacturing processes, such as etching and deposition, where precise control of plasma processing is required.
Problems Solved
This method allows for more precise control and customization of plasma processing parameters for different zones of the substrate, leading to improved process efficiency and quality.
Benefits
- Enhanced control over plasma processing parameters - Improved uniformity and quality of substrate processing - Increased efficiency and productivity in semiconductor manufacturing
Potential Commercial Applications
"Optimizing Plasma Processing Parameters for Semiconductor Manufacturing"
Possible Prior Art
Prior art may include methods of controlling plasma processing parameters in semiconductor manufacturing, but the specific technique of pulsing direct current voltage to different conductors with varying parameters may be novel.
Unanswered Questions
How does this method compare to existing plasma processing techniques in terms of efficiency and quality?
This article does not provide a direct comparison with existing plasma processing techniques to evaluate the advantages and limitations of the proposed method.
What are the specific applications within semiconductor manufacturing where this method could provide the most significant benefits?
The article does not delve into specific examples or case studies within semiconductor manufacturing where this method could be particularly advantageous.
Original Abstract Submitted
A method of plasma processing includes delivering direct current voltage to a substrate holder including an upper side configured to support a substrate disposed within a plasma processing chamber. The upper side is divided into a plurality of zones by a plurality of conductors electrically isolated from each other. The method further includes pulsing the direct current voltage as first direct current pulses to a first conductor of the plurality of conductors using first pulse parameters, and pulsing the direct current voltage as second direct current pulses to a second conductor of the plurality of conductors using second pulse parameters that are different from the first pulse parameters. The direct current voltage is pulsed to the second conductor while pulsing the direct current voltage to the first conductor.
