17958288. PLUG IN A METAL LAYER simplified abstract (Intel Corporation)

PLUG IN A METAL LAYER

Organization Name

Intel Corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Gurpreet Singh of Beaverton OR (US)

Charles H. Wallace of Portland OR (US)

Tahir Ghani of Portland OR (US)

PLUG IN A METAL LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17958288 titled 'PLUG IN A METAL LAYER

Simplified Explanation

Embodiments described in the patent application relate to the formation of a plug within a metal layer of a semiconductor device, where the plug is created within a cavity in the metal layer. The plug extends through the metal layer into a layer below, which may contain a dielectric and electrical routing features. The plug is made of an electrical insulator material and is formed by etching through the metal layer and filling the cavity with a dielectric material. The plug is tapered and wider at the top, becoming narrower as it reaches the layer below the metal layer.

• Plug formation within a metal layer of a semiconductor device
• Plug extends through the metal layer into a layer below
• Plug made of electrical insulator material
• Cavity created by etching through the metal layer and filling with dielectric material
• Tapered plug shape, wider at the top and narrower as it reaches the layer below

Potential Applications

This technology could be applied in the manufacturing of semiconductor devices, specifically in creating electrical connections within the device.

Problems Solved

This technology solves the problem of forming plugs within metal layers of semiconductor devices in a precise and controlled manner.

Benefits

The benefits of this technology include improved electrical connections within semiconductor devices, increased efficiency in manufacturing processes, and enhanced device performance.

Potential Commercial Applications

One potential commercial application of this technology could be in the semiconductor industry for the production of advanced electronic devices.

Possible Prior Art

Prior art in the field of semiconductor manufacturing may include similar techniques for forming plugs within metal layers of devices, but the specific method described in this patent application may be novel and inventive.

How does this technology compare to existing methods for forming plugs within metal layers of semiconductor devices?

This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the advantages and disadvantages of this new technique.

What are the specific materials used in the plug formation process, and how do they contribute to the overall performance of the semiconductor device?

The article mentions the use of an electrical insulator material for the plug, but does not delve into the specifics of the materials or their impact on device performance.

Original Abstract Submitted

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a plug within a metal layer of a semiconductor device, where the plug is formed within a cavity that is created through the metal layer. The plug may extend through the metal layer and into a layer below the metal layer, which may be a layer that includes a dielectric and one or more electrical routing features. The plug may include an electrical insulator material. The cavity may be formed by placing a mask above the metal layer and performing an etch through the metal layer subsequently filled with a dielectric, where the plug will be tapered and wider at the top of the plug and become narrower as the plug continues through the metal layer and reaches the layer below the metal layer. Other embodiments may be described and/or claimed.