17958205. TRENCH SHIELDED TRANSISTOR simplified abstract (TEXAS INSTRUMENTS INCORPORATED)

TRENCH SHIELDED TRANSISTOR

Organization Name

TEXAS INSTRUMENTS INCORPORATED

Inventor(s)

Hong Yang of Wylie TX (US)

Thomas Grebs of Bethlehem PA (US)

Yunlong Liu of Chengdu (CN)

Sunglyong Kim of Allen TX (US)

Lindong Li of Chengdu (SC)

Peng Li of Chongqing (CN)

Seetharaman Sridhar of Richardson TX (US)

Yeguang Zhang of Chengdu (SC)

Sheng pin Yang of Chengdu (SC)

TRENCH SHIELDED TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 17958205 titled 'TRENCH SHIELDED TRANSISTOR

Simplified Explanation

The patent application describes an integrated circuit with trenches, a semiconductor mesa, source and body regions, a trench shield, gate electrode, gate dielectric, PMD layer, gate contact, and trench shield contact.

• The integrated circuit includes first and second trenches in a semiconductor substrate.
• A semiconductor mesa is located between the first and second trenches.
• A source region with a first conductivity type and a body region with an opposite second conductivity type are within the semiconductor mesa.
• A trench shield is in the first trench, and a gate electrode is over the trench shield between the first and second sidewalls of the first trench.
• A gate dielectric is on a sidewall of the first trench between the gate electrode and the body region.
• A PMD layer is over the gate electrode.
• A gate contact through the PMD layer touches the gate electrode between the first and second sidewalls.
• A trench shield contact through the PMD layer touches the trench shield between the first and second sidewalls.

Potential Applications

This technology could be applied in the development of high-performance integrated circuits for various electronic devices, such as smartphones, computers, and automotive systems.

Problems Solved

This technology helps in improving the performance and efficiency of integrated circuits by enhancing the control and functionality of the components within the semiconductor substrate.

Benefits

The benefits of this technology include increased speed, reduced power consumption, and enhanced reliability of integrated circuits, leading to better overall performance of electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for manufacturing advanced integrated circuits for consumer electronics, telecommunications, and automotive applications.

Possible Prior Art

One possible prior art could be the use of trench structures in semiconductor devices to improve performance and reduce parasitic effects. Additionally, the integration of gate electrodes and trench shields in semiconductor substrates may have been previously explored for enhancing the functionality of integrated circuits.

Unanswered Questions

How does this technology compare to existing trench-based integrated circuits in terms of performance and efficiency?

The article does not provide a direct comparison with existing trench-based integrated circuits to evaluate the performance and efficiency improvements offered by this technology.

What are the specific manufacturing processes involved in implementing this technology in integrated circuit production?

The article does not detail the specific manufacturing processes or techniques required to incorporate this technology into the production of integrated circuits.

Original Abstract Submitted

An integrated circuit includes first and second trenches in a semiconductor substrate and a semiconductor mesa between the first and second trenches. A source region having a first conductivity type and a body region having an opposite second conductivity type are located within the semiconductor mesa. A trench shield is located within the first trench, and a gate electrode is over the trench shield between first and second sidewalls of the first trench. A gate dielectric is on a sidewall of the first trench between the gate electrode and the body region, and a pre-metal dielectric (PMD) layer is over the gate electrode. A gate contact through the PMD layer touches the gate electrode between the first and second sidewalls, and a trench shield contact through the PMD layer touches the trench shield between the first and second sidewalls.