17958040. SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)

SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE

Organization Name

TEXAS INSTRUMENTS INCORPORATED

Inventor(s)

Jeffrey Alan West of Dallas TX (US)

Thomas Dyer Bonifield of Dallas TX (US)

Toshiyuki Tamura of Ushiku-shi (JP)

Yoshihiro Takei of Kashiwa-shi (JP)

SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17958040 titled 'SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE

Simplified Explanation

The microelectronic device described in the patent application includes an isolation device with a unique structure to improve performance and reliability. Here are some key points to explain the innovation:

• The isolation device consists of a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between them.
• The inorganic dielectric plateau contains an upper etch stop layer and a lower etch stop layer to control the etching process and protect underlying components.
• Alternating layers of high stress and low stress silicon dioxide in the inorganic dielectric plateau provide reinforcement and stability.

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Semiconductor manufacturing
• Microelectronics industry
• Integrated circuit design

Problems Solved

This technology addresses the following issues:

• Improved isolation between components
• Enhanced reliability and performance of microelectronic devices
• Protection of underlying metal bond pads

Benefits

The benefits of this technology include:

• Increased durability and longevity of microelectronic devices
• Enhanced signal integrity
• Improved overall performance of integrated circuits

Potential Commercial Applications

The innovative isolation device could be utilized in various commercial applications such as:

• Mobile devices
• Computer hardware
• Automotive electronics

Possible Prior Art

One possible prior art in this field is the use of traditional etch stop layers in microelectronic devices to control the etching process and protect underlying components.

How does this technology compare to existing isolation devices in terms of performance and reliability?

The patent application provides detailed information about the structure and function of the isolation device, but it does not directly compare its performance and reliability to existing technologies. Further testing and analysis would be needed to answer this question definitively.

What are the potential challenges or limitations of implementing this technology in mass production?

While the patent application highlights the benefits and features of the innovation, it does not address the potential challenges or limitations of mass-producing devices with this technology. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations.

Original Abstract Submitted

A microelectronic device including an isolation device. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The inorganic dielectric plateau contains an upper etch stop layer and a lower etch stop layer between the upper isolation element and the lower isolation element. The upper etch stop layer provides an end point signal during the plateau etch process which provides feedback on the amount of inorganic dielectric plateau which has been etched. The lower etch stop layer provides a traditional etch stop function to provide for a complete plateau etch and protection of an underlying metal bond pad. The inorganic dielectric plateau also contains alternating layers of high stress and low stress silicon dioxide, which provide a means of reinforcement of the inorganic dielectric plateau.