17952826. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17952826 titled 'NON-VOLATILE MEMORY DEVICE
Simplified Explanation
The abstract describes a non-volatile memory device that includes memory blocks, memory cell strings, a page buffer unit, pass units, monitoring units, a voltage generator, and control logic. The device is designed to measure leakage current in a specific pass transistor and detect it using monitoring voltages.
- The memory device consists of memory blocks with multiple memory cells and word lines, as well as memory cell strings.
- A page buffer unit is included to facilitate data transfer between the memory cells and external devices.
- Pass units are present to supply operation voltages to the word lines, and monitoring units are included to measure leakage current in the pass transistors.
- A voltage generator is responsible for supplying activation voltages to the pass transistors and monitoring pass transistors.
- Control logic is used to control the voltage generator and detect the leakage current based on monitoring voltages.
Potential Applications
- This non-volatile memory device can be used in various electronic devices that require reliable and efficient memory storage.
- It can be applied in smartphones, tablets, laptops, digital cameras, and other consumer electronics.
- The technology can also be utilized in industrial applications such as data centers, servers, and embedded systems.
Problems Solved
- The device addresses the issue of leakage current in pass transistors, which can affect the performance and reliability of the memory device.
- By measuring and detecting the leakage current, potential failures can be identified and mitigated, ensuring the proper functioning of the memory device.
Benefits
- The ability to measure and detect leakage current allows for proactive maintenance and troubleshooting of the memory device.
- By identifying and addressing potential failures early on, the device's lifespan and reliability can be significantly improved.
- The technology provides a more efficient and accurate method for monitoring the performance of pass transistors, leading to enhanced overall memory device performance.
Original Abstract Submitted
A non-volatile memory device includes: one or more memory blocks including a plurality of memory cells connected to a plurality of word lines, and a plurality of memory cell strings; a page buffer unit; one or more pass units including a plurality of pass transistors that may supply operation voltages to the plurality of word lines; one or more monitoring units including one or more monitoring pass transistors connected to the plurality of pass transistors; a voltage generator that may supply activation voltages to a first pass transistor, in which a leakage current is to be measured, and to the one or more monitoring pass transistors; and a control logic that may control the voltage generator to generate the activation voltages by using a voltage control signal and detect the leakage current based on monitoring voltages output from the one or more monitoring pass transistors.
