17946355. HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE
Organization Name
Inventor(s)
WEI-CHUAN Fang of NEW TAIPEI CITY (TW)
HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17946355 titled 'HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE
Simplified Explanation
The abstract describes a patent application for a hardmask structure and a method of forming a semiconductor structure. The hardmask structure includes a first ashable hardmask, a first dielectric antireflective coating, and a second ashable hardmask. The stress of the first ashable hardmask is between -100 MPa to 100 MPa.
- Explanation of the patent:
* The patent describes a hardmask structure for semiconductor manufacturing. * It includes two ashable hardmasks and a dielectric antireflective coating. * The stress of the first ashable hardmask is controlled within a specific range.
- Potential applications of this technology:
* Semiconductor fabrication processes * Photolithography in the semiconductor industry
- Problems solved by this technology:
* Improving the precision and quality of semiconductor manufacturing * Enhancing the performance of semiconductor devices
- Benefits of this technology:
* Better control over the etching process * Increased efficiency in semiconductor production
- Potential commercial applications of this technology:
* Semiconductor manufacturing equipment * Semiconductor fabrication services
- Possible prior art:
* Previous patents related to hardmask structures in semiconductor manufacturing
- Unanswered Questions:
- How does this technology compare to existing hardmask structures in terms of performance and cost?
- Unanswered Questions:
This article does not provide a direct comparison with existing hardmask structures in the semiconductor industry. Further research or testing may be needed to evaluate the performance and cost-effectiveness of this technology.
- What are the specific steps involved in the method of forming a semiconductor structure using this hardmask structure?
The article briefly mentions the method of forming a semiconductor structure but does not provide detailed steps. Additional information or a more in-depth explanation of the process would be helpful for understanding the practical application of this technology.
Original Abstract Submitted
A hardmask structure and a method of forming a semiconductor structure are provided. The hardmask structure includes a first ashable hardmask, a first dielectric antireflective coating, and a second ashable hardmask. The first dielectric antireflective coating is disposed on the first ashable hardmask. The second ashable hardmask is disposed on the first dielectric antireflective coating. A stress of the first ashable hardmask is from about −100 MPa to about 100 MPa.