17943840. TRANSISTOR DEVICES WITH INTEGRATED DIODES simplified abstract (Intel Corporation)
Contents
- 1 TRANSISTOR DEVICES WITH INTEGRATED DIODES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSISTOR DEVICES WITH INTEGRATED DIODES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Unanswered Questions
- 1.10 Original Abstract Submitted
TRANSISTOR DEVICES WITH INTEGRATED DIODES
Organization Name
Inventor(s)
Nicholas A. Thomson of Hillsboro OR (US)
Kalyan C. Kolluru of Portland OR (US)
Mauro J. Kobrinksy of Portland OR (US)
Benjamin Orr of Beaverton OR (US)
TRANSISTOR DEVICES WITH INTEGRATED DIODES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17943840 titled 'TRANSISTOR DEVICES WITH INTEGRATED DIODES
Simplified Explanation
The patent application describes an integrated circuit structure with specific dopant regions for electrostatic discharge protection.
- The integrated circuit structure includes a sub-fin with a first type of dopant, a first diffusion region with the same dopant in contact with the sub-fin, and second and third diffusion regions with a different type of dopant in contact with the sub-fin.
- The first diffusion region acts as a tap diffusion region for forming a diode for electrostatic discharge protection.
- A first body of semiconductor material extends from the second diffusion region to the third diffusion region, while a second body extends from the first diffusion region towards the second diffusion region.
Potential Applications
The technology described in the patent application can be applied in various electronic devices requiring electrostatic discharge protection, such as smartphones, tablets, and computers.
Problems Solved
This technology solves the problem of electrostatic discharge damaging integrated circuits by providing a diode for protection.
Benefits
The integrated circuit structure offers improved electrostatic discharge protection, enhancing the reliability and longevity of electronic devices.
Potential Commercial Applications
- Enhancing the durability and reliability of consumer electronics
- Improving the performance of industrial equipment
Unanswered Questions
How does the integration of different dopant regions improve electrostatic discharge protection?
The patent application does not delve into the specific mechanisms behind the effectiveness of the integrated dopant regions for electrostatic discharge protection.
Are there any limitations to the application of this technology in certain electronic devices?
The patent application does not address any potential limitations or challenges in implementing this technology in specific electronic devices.
Original Abstract Submitted
An integrated circuit structure includes a sub-fin having a first type of dopant, a first diffusion region having the first type of dopant and in contact with the sub-fin, and a second diffusion region and a third diffusion region having a second type of dopant and in contact with the sub-fin. The first type of dopant is one of p-type or n-type dopant, and where the second type of dopant is the other of the p-type or n-type dopant. A first body of semiconductor material extends from the second diffusion region to the third diffusion region, and a second body of semiconductor material extends from the first diffusion region towards the second diffusion region. The first diffusion region is a tap diffusion region contacting the sub-fin. In an example, the first diffusion region facilitates formation of a diode for electrostatic discharge (ESD) protection of the integrated circuit structure.
