17943812. DIODES WITH BACKSIDE CONTACT simplified abstract (Intel Corporation)
Contents
- 1 DIODES WITH BACKSIDE CONTACT
DIODES WITH BACKSIDE CONTACT
Organization Name
Inventor(s)
Nicholas A. Thomson of Hillsboro OR (US)
Kalyan C. Kolluru of Portland OR (US)
Mauro J. Kobrinsky of Portland OR (US)
DIODES WITH BACKSIDE CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17943812 titled 'DIODES WITH BACKSIDE CONTACT
Simplified Explanation
The integrated circuit structure described in the patent application includes a sub-fin doped with a first type of dopant and a diffusion region doped with a second type of dopant. The diffusion region is in contact with the sub-fin and extends upward from it. The first type of dopant can be either a p-type or an n-type dopant, while the second type of dopant is the other type.
- The structure includes a sub-fin doped with a first type of dopant and a diffusion region doped with a second type of dopant.
- The diffusion region is in contact with the sub-fin and extends upward from it.
- The first type of dopant can be either a p-type or an n-type dopant, while the second type of dopant is the other type.
- A first conductive contact is above and on the diffusion region, while a second conductive contact is in contact with the sub-fin.
- The diffusion region can be part of an anode or a cathode of a diode, while the sub-fin portion can be part of the other terminal of the diode.
Potential Applications
The technology described in the patent application could be used in:
- Semiconductor devices
- Integrated circuits
- Diodes
Problems Solved
This technology helps in:
- Enhancing the performance of semiconductor devices
- Improving the efficiency of integrated circuits
- Facilitating the design of diodes
Benefits
The benefits of this technology include:
- Increased conductivity
- Better control over dopant distribution
- Enhanced device reliability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Electronics manufacturing
- Semiconductor industry
- Consumer electronics
Unanswered Questions
How does this technology impact the power consumption of electronic devices?
The technology described in the patent application could potentially impact the power consumption of electronic devices by improving their efficiency and conductivity.
What are the potential cost implications of implementing this technology in semiconductor manufacturing?
The cost implications of implementing this technology in semiconductor manufacturing would depend on factors such as production scale, materials used, and process complexity.
Original Abstract Submitted
An integrated circuit structure includes a sub-fin having at least a portion that is doped with a first type of dopant, and a diffusion region doped with a second type of dopant. The diffusion region is in contact with the sub-fin and extends upward from the sub-fin. The first type of dopant is one of a p-type or an n-type dopant, and the second type of dopant is the other of the p-type or the n-type dopant. In an example, a first conductive contact is above and on the diffusion region, and a second conductive contact is in contact with the portion of the sub-fin. In an example, the diffusion region is at least a part of one of an anode or a cathode of a diode, and the portion of the sub-fin is at least a part of the other of the anode or the cathode of the diode.
