17940635. IMAGE SENSOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

JAESUNG Hur of Yongin-si (KR)

KIJOONG Yoon of Goyang-si (KR)

HAJIN Lim of Seoul (KR)

JONGMIN Jeon of Suwon-si (KR)

TAEKSOO Jeon of Hwaseong-si (KR)

IN SUNG Joe of Seoul (KR)

IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17940635 titled 'IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes an image sensor with improved light-shielding capabilities and image quality. Here are the key points:

  • The image sensor includes a substrate, unit pixels, device isolation patterns, a light-shield layer, color filters, and micro-lenses.
  • The light-shield layer has a grid structure that defines optical transmission regions.
  • The light-shield layer also includes a light-shield pattern, a low-refractive pattern, and a protection layer.
  • The low-refractive pattern contains a porous silicon compound with pores of diameter ranging from 0.2 nm to 1 nm.

Potential applications of this technology:

  • Digital cameras
  • Smartphone cameras
  • Surveillance cameras
  • Medical imaging devices
  • Automotive cameras

Problems solved by this technology:

  • Improved light-shielding capabilities to prevent unwanted light from reaching the image sensor.
  • Enhanced image quality by reducing noise and improving color accuracy.

Benefits of this technology:

  • Higher image quality with improved color reproduction and reduced noise.
  • Better performance in low-light conditions.
  • Increased durability and protection for the image sensor.


Original Abstract Submitted

An image sensor includes a substrate, a plurality of unit pixels provided on a pixel area of the substrate, a plurality of device isolation patterns defining the plurality of unit pixels on the pixel area, a light-shield layer provided on a top surface of the substrate and comprising a grid structure defining a plurality of optical transmission regions, a plurality of color filters provided on the plurality of optical transmission regions of the light-shield layer, and a plurality of micro-lenses provided on the plurality color filters. The light-shield layer includes a light-shield pattern, a low-refractive pattern provided on the light-shield pattern, and a protection layer configured to cover the light-shield pattern and the low-refractive pattern on the substrate. The low-refractive pattern includes a porous silicon compound. Pores in the low-refractive pattern have a diameter of about 0.2 nm to about 1 nm.