17938200. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Changyup Park of Suwon-si (KR)
Donggeon Gu of Hwaseong-si (KR)
Wonjun Park of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17938200 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a semiconductor device that includes gate electrodes, a channel, and a resistance pattern. The gate electrodes are positioned vertically on a substrate, and the channel runs through them. The resistance pattern consists of a phase-changeable material and has specific components such as vertical extension portions, protrusion portions, and inner and outer sidewalls.
- The gate electrodes are spaced apart vertically on a substrate.
- The channel extends through the gate electrodes in a vertical direction.
- The resistance pattern includes a phase-changeable material.
- The resistance pattern has a first vertical extension portion on the channel's sidewall, extending vertically.
- The resistance pattern also includes a first protrusion portion on the inner sidewall of the first vertical extension, protruding horizontally.
- Additionally, there is a second protrusion portion on the outer sidewall of the first vertical extension, protruding horizontally and not overlapping the first protrusion portion.
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved
- Improved performance and functionality of semiconductor devices
- Enhanced control over electrical resistance in the device
Benefits
- Higher efficiency and reliability in semiconductor devices
- Increased flexibility in designing and optimizing circuitry
- Potential for advancements in various electronic applications
Original Abstract Submitted
A semiconductor device includes gate electrodes on a substrate, a channel and a resistance pattern. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The channel extends through the gate electrodes in the vertical direction on the substrate. The resistance pattern includes a phase-changeable material. The resistance pattern includes a first vertical extension portion on a sidewall of the channel and extending in the vertical direction, a first protrusion portion on an inner sidewall of the first vertical extension portion and protruding in a horizontal direction substantially parallel to the upper surface of the substrate, and a second protrusion portion on an outer sidewall of the first vertical extension portion and protruding in the horizontal direction and not overlapping the first protrusion portion in the horizontal direction.
