17936965. ESD STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
ESD STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chun-Chia Hsu of Kaohsiung City (TW)
Tung-Heng Hsieh of Hsinchu County (TW)
Yung-Feng Chang of Hsinchu City (TW)
Bao-Ru Young of Zhubei City (TW)
Chih-Hung Wang of Hsinchu City (TW)
ESD STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17936965 titled 'ESD STRUCTURE
Simplified Explanation
The abstract describes an electrostatic discharge (ESD) structure that includes different semiconductor layers and conductive features to protect against ESD events. Here are the key points:
- The ESD structure is built on a semiconductor substrate.
- It consists of a first epitaxy region with a specific type of conductivity and a second epitaxy region with a different type of conductivity.
- Between these epitaxy regions, there are alternating layers of first and second semiconductor layers.
- A first conductive feature is formed over the first epitaxy region, and a second conductive feature is formed over the second epitaxy region.
- An oxide diffusion region is located between the first and second conductive features.
Potential applications of this technology:
- Integrated circuits: The ESD structure can be integrated into semiconductor devices to protect them from electrostatic discharge events.
- Electronics manufacturing: This technology can be used in the production of electronic components to ensure their reliability and durability.
Problems solved by this technology:
- Electrostatic discharge protection: The ESD structure provides a safeguard against ESD events, which can damage or destroy sensitive electronic components.
- Improved reliability: By incorporating this structure, the reliability of semiconductor devices and electronic components can be enhanced, reducing the risk of failure.
Benefits of this technology:
- Enhanced ESD protection: The ESD structure provides a robust defense against electrostatic discharge events, preventing damage to sensitive components.
- Improved device reliability: By incorporating this structure, the overall reliability of semiconductor devices and electronic components is increased, leading to longer lifetimes and reduced failure rates.
Original Abstract Submitted
Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of first semiconductor layers and a plurality of second semiconductor layers. The first and second semiconductor layers are alternatingly stacked over the semiconductor substrate and between the first and second epitaxy regions. A first conductive feature is formed over the first epitaxy region and outside an oxide diffusion region. A second conductive feature is formed over the second epitaxy region and outside the oxide diffusion region. The oxide diffusion region is disposed between the first and second conductive features.
