17934317. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Yongjae Lee of Seongnam-si (KR)

Kyungsoo Kim of Hwaseong-si (KR)

Jinyoung Park of Suwon-si (KR)

Kyen-Hee Lee of Seoul (KR)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17934317 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The patent application describes a semiconductor memory device that includes a magnetic tunnel junction pattern and a spin-orbit torque (SOT) pattern. It also includes two transistors, each controlled by a separate word line. The effective channel width of the transistors may be different.

• The semiconductor memory device includes a magnetic tunnel junction pattern and a spin-orbit torque (SOT) pattern.
• It includes two transistors, each controlled by a separate word line.
• The first transistor is electrically connected to a portion of the magnetic tunnel junction pattern.
• The second transistor is electrically connected to one end of the spin-orbit torque pattern.
• The effective channel width of the first transistor may be different from the effective channel width of the second transistor.

Potential Applications

• This technology can be used in various memory devices, such as computer RAM or solid-state drives.
• It can also be applied in other semiconductor devices that require efficient data storage and retrieval.

Problems Solved

• The semiconductor memory device addresses the need for efficient and reliable data storage.
• It solves the problem of controlling different portions of the magnetic tunnel junction pattern and the spin-orbit torque pattern using separate transistors.

Benefits

• The use of separate transistors controlled by different word lines allows for more precise control and operation of the memory device.
• The different effective channel widths of the transistors provide flexibility in designing and optimizing the device for specific applications.
• The combination of the magnetic tunnel junction pattern and the spin-orbit torque pattern enhances the performance and reliability of the memory device.

Original Abstract Submitted

A semiconductor memory device is disclosed. The semiconductor memory device may include a magnetic tunnel junction pattern, a spin-orbit torque (SOT) pattern in contact with a first portion of the magnetic tunnel junction pattern, a first transistor electrically connected to a second portion of the magnetic tunnel junction pattern and configured to be controlled by a first word line, and a second transistor electrically connected to a first end of the spin-orbit torque pattern and configured to be controlled by a second word line. An effective channel width of the first transistor may be different from an effective channel width of the second transistor.