17932182. Structure and Method of Fabrication for High Performance Integrated Passive Device simplified abstract (Apple Inc.)
Contents
- 1 Structure and Method of Fabrication for High Performance Integrated Passive Device
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Structure and Method of Fabrication for High Performance Integrated Passive Device - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Original Abstract Submitted
Structure and Method of Fabrication for High Performance Integrated Passive Device
Organization Name
Inventor(s)
Vidhya Ramachandran of Cupertino CA (US)
Chi Nung Ni of Foster City CA (US)
Chueh-An Hsieh of Hsinchu County (TW)
Rekha Govindaraj of San Jose CA (US)
Long Huang of San Jose CA (US)
Rohan U. Mandrekar of Sunnyvale CA (US)
Saumya K. Gandhi of San Francisco CA (US)
Yizhang Yang of Sunnyvale CA (US)
Saurabh P. Sinha of Austin TX (US)
Antonietta Oliva of Sausalito CA (US)
Structure and Method of Fabrication for High Performance Integrated Passive Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 17932182 titled 'Structure and Method of Fabrication for High Performance Integrated Passive Device
Simplified Explanation
The abstract describes a microelectronic module with a semiconductor-based integrated passive device between the chip and the module substrate, featuring an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up, and may be solder bonded or hybrid bonded with the chip.
- Module includes module substrate, chip, and semiconductor-based integrated passive device
- Integrated passive device has upper RDL stack-up with thicker wiring layers
- Device may be solder bonded or hybrid bonded with chip
Potential Applications
The technology described in this patent application could be applied in various industries such as telecommunications, consumer electronics, automotive, and medical devices.
Problems Solved
This technology solves the problem of integrating passive devices in microelectronic modules efficiently and effectively, improving overall performance and reliability.
Benefits
The benefits of this technology include enhanced functionality, increased miniaturization, improved signal integrity, and reduced manufacturing costs.
Potential Commercial Applications
Optimizing Microelectronic Modules with Semiconductor-Based Integrated Passive Devices for Enhanced Performance and Reliability
Original Abstract Submitted
Microelectronic modules are described. In an embodiment, a microelectronic module includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. The semiconductor-based integrated passive device may include an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up. The semiconductor-based integrated passive device may be further solder bonded or hybrid bonded with the chip.
- Apple Inc.
- Vidhya Ramachandran of Cupertino CA (US)
- Chi Nung Ni of Foster City CA (US)
- Chueh-An Hsieh of Hsinchu County (TW)
- Rekha Govindaraj of San Jose CA (US)
- Jun Zhai of Cupertino CA (US)
- Long Huang of San Jose CA (US)
- Rohan U. Mandrekar of Sunnyvale CA (US)
- Saumya K. Gandhi of San Francisco CA (US)
- Zhuo Yan of San Jose CA (US)
- Yizhang Yang of Sunnyvale CA (US)
- Saurabh P. Sinha of Austin TX (US)
- Antonietta Oliva of Sausalito CA (US)
- H01L23/528
- H01L23/00
- H01L23/48
- H01L23/522
- H01L49/02