17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ruqiang Bao of Niskayuna NY (US)

Brent A. Anderson of Jericho VT (US)

Curtis S. Durfee of Schenectady NY (US)

Gen Tsutsui of Glenmont NY (US)

Junli Wang of Slingerlands NY (US)

FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17931982 titled 'FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER

Simplified Explanation

The semiconductor device described in the patent application includes a semiconductor substrate and a pFET transistor formed on the substrate. The pFET transistor has multiple channel regions, with the uppermost channel region consisting of an uppermost active semiconductor layer and a capping layer on top of it.

  • Semiconductor device with pFET transistor
  • Uppermost channel region with active semiconductor layer and capping layer
  • Formed on semiconductor substrate

Potential Applications

The technology described in this patent application could be used in:

  • Integrated circuits
  • Microprocessors
  • Memory devices

Problems Solved

This technology helps in:

  • Improving performance of semiconductor devices
  • Enhancing efficiency of pFET transistors
  • Reducing power consumption

Benefits

The benefits of this technology include:

  • Higher speed and performance
  • Lower power consumption
  • Improved reliability and longevity

Potential Commercial Applications

Optimizing pFET transistors for:

  • Consumer electronics
  • Automotive electronics
  • Industrial automation devices


Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, and a pFET transistor formed on the semiconductor substrate. The pFET transistor includes a plurality of channel regions. An uppermost channel region of the plurality of channel regions includes an uppermost active semiconductor layer and a capping layer formed on the uppermost active semiconductor layer.