17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Ruqiang Bao of Niskayuna NY (US)
Brent A. Anderson of Jericho VT (US)
Curtis S. Durfee of Schenectady NY (US)
Gen Tsutsui of Glenmont NY (US)
Junli Wang of Slingerlands NY (US)
FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17931982 titled 'FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER
Simplified Explanation
The semiconductor device described in the patent application includes a semiconductor substrate and a pFET transistor formed on the substrate. The pFET transistor has multiple channel regions, with the uppermost channel region consisting of an uppermost active semiconductor layer and a capping layer on top of it.
- Semiconductor device with pFET transistor
- Uppermost channel region with active semiconductor layer and capping layer
- Formed on semiconductor substrate
Potential Applications
The technology described in this patent application could be used in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved
This technology helps in:
- Improving performance of semiconductor devices
- Enhancing efficiency of pFET transistors
- Reducing power consumption
Benefits
The benefits of this technology include:
- Higher speed and performance
- Lower power consumption
- Improved reliability and longevity
Potential Commercial Applications
Optimizing pFET transistors for:
- Consumer electronics
- Automotive electronics
- Industrial automation devices
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, and a pFET transistor formed on the semiconductor substrate. The pFET transistor includes a plurality of channel regions. An uppermost channel region of the plurality of channel regions includes an uppermost active semiconductor layer and a capping layer formed on the uppermost active semiconductor layer.
